Abstract
In this paper, increasing indium composition ‘x’ in quantum barriers of In0.15Ga0.85N/InxGa(1-x)N based laser diode structure is proposed. The paper analyses the effect of molar composition of indium in quantum barrier and geometrical variation of barrier thickness. Observations related to laser power characteristics, material strain, band diagram analysis and carrier density has been carried out in the modified structures. Laser power has experienced an increment from 126 mW to ~ 172 mW in proposed laser diode structure as compared to the reference structure. The optical confinement factor of the active region has improved from 0.94% to 1.33%. The electron potential barrier height has upsized from 171 meV to 187 meV, while the hole potential barrier height has downsized from 150 meV to 135 meV at 120 mA injection current. Analysis of increasing indium composition in quantum barriers has been laid out to examine the effect of epitaxial symmetry in the device structure.
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Acknowledgements
The authors are sincerely thankful to Director, CSIR-CEERI and Director, SSPL, DRDO for allowing them to complete this work.
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The DRDO, New Delhi, has supported and sponsored the initiative, which the authors would like to thank for that project (GAP 3240).
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KS, IM, and MM: wrote the main manuscript text and prepared figures. All other authors have given significant inputs throughout the work and reviewed the manuscript.
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Sapra, K., Mazumder, I., Lohani, K. et al. Effect of compositionally co-related and orderly varying indium molar content on the performance of In0.15Ga0.85N/InxGa(1−x)N laser diode structure. Opt Quant Electron 56, 470 (2024). https://doi.org/10.1007/s11082-023-06038-3
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DOI: https://doi.org/10.1007/s11082-023-06038-3