Abstract
The photosensitive and electrical characteristics of almost efficiency-droop-free UV-C LEDs with a Mg-doped LQB and Si-doped shallow periodic Electron Injection Layer in between Mg-doped EBL and Hole Injection Layer are studied numerically in order to enhance the optical and electrical performance. SiLENSe software is used to look into the Quantum Barrier-Quantum Wells region’s IQE, energy band profiles, electron and hole concentration, and radiative recombination rates. The findings show that the proposed UV-C LED has peak IQE 140% higher than the reference one, which is generally related to the improvement of electron and hole function overlapping in QB-QWs region. The proposed modification would decrease hole barrier depth by 64% in LQB-EBL, which is what causes the 190% better hole injection from Mg-doped layer.
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The CSIR, New Delhi, has supported and sponsored the initiative, which the authors would like to thank for that project (HCP 0034). All the authors are very thankful to the Director of the CSIR-CEERI for his extensive support.
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The CSIR, New Delhi, has supported and sponsored the initiative, which the authors would like to thank for that project (HCP 0034).
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Indrani.Mazumder. and Kuldip.Singh. wrote the main manuscript text and prepared Figs. 1, 2, 3 and 4 , Kashish.Sapra. prepared Figs. 5, 6 and 7. All authors reviewed the manuscript.
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Mazumder, I., Sapra, K., Chahun, A. et al. Efficiency droop free UV-C LED by introducing p-doped LQB and p-n-p-n-p doped AlGaN hole injection layer. Opt Quant Electron 56, 52 (2024). https://doi.org/10.1007/s11082-023-05545-7
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DOI: https://doi.org/10.1007/s11082-023-05545-7