Abstract
Luminescence of 1-octadecene-coated silicon nanoparticles with 8 nm crystalline core in hexane and CCl4 colloidal solutions and its reversible photobleaching were examined. In agreement with previous reports, anti-correlation of luminescence intensity and the number of paramagnetic defects were found in hexane. Luminescence intensity is decreased by 75% during 30 min of 405 nm laser irradiation while the number of paramagnetic defects is increased by 65%. Paramagnetic defects were supposed to be silicon dangling bonds. In CCl4 colloidal solution, this correlation is lost: photobleaching is similar to hexane colloidal solution, while the number of paramagnetic defects is not changed during irradiation. Electron trapping and subsequent breaking of weak Si-Si bonds are proposed to be the reason of formation of silicon dangling bonds during irradiation. DFT calculation of geometry and g-tensor of Si-vacancy on the boundary of crystalline silicon core and oxide shell was performed. Formation of paramagnetic defects is supposed to be a by-process responsible only for a minor effect on luminescence intensity.
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Acknowledgments
The authors are grateful to Prof. G.V. Fetisov for performing SAXS measurements. The research is carried out using the equipment of the shared research facilities of HPC computing resources at Lomonosov Moscow State University (Sadovnichy et al. 2013). The electron microscopy was performed using the equipment of the Shared Research Center “Structural diagnostics of materials” and partially supported by the Ministry of Science and Higher Education within the State assignment FSRC “Crystallography and Photonics” RAS. O.I.G. and E.D.F. acknowledge (partial) support from M.V. Lomonosov Moscow State University Program of Development.
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The research is partially supported by the Russian Foundation for Basic Research (Grant No. 16-29-11741).
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Gromov, O.I., Feklichev, E.D., Zhidomirov, G.M. et al. Influence of solvent electron affinity on paramagnetic defects in hybrid Si/SiOx luminescent nanoparticles. J Nanopart Res 21, 127 (2019). https://doi.org/10.1007/s11051-019-4575-5
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DOI: https://doi.org/10.1007/s11051-019-4575-5