Abstract
Aiming to solve the intrinsic brittleness of Sn–Bi solder alloy, the effects of In element on the microstructure evolution, mechanical and soldering properties were systematically investigated in Sn–57Bi–1Ag-based alloy. It was found that the addition of In could fragment the reticular Bi-rich phase and increase the content of β-Sn phase in the Sn–(57 − x)Bi–1Ag–xIn alloy, which significantly improved the fracture elongation of the In-containing solder alloy. The elongation of Sn–56.0Bi–1Ag–1.0In reached 68.51%, which was 2.3 times that of Sn–57Bi–1Ag (~ 29.68%). What’s more, the fracture mechanism of the alloy changes from brittle fracture to mixed ductile-brittle fracture with the addition of In element, implying a significant progress in solving the brittleness problem of Sn–Bi solder alloy. Meanwhile, compared to Sn–57Bi–1Ag, the lower melting point and solidification temperature of the In-containing solder alloys improved the solderability, which enhances the spreading rate of alloy and results in a maximum spreading rate of 72.00% for the Sn–56.0Bi–1Ag–1.0In. This work provides a valuable guidance for industrial production of solder alloys as it simultaneously improved both the solderability and the ductility of Sn–Bi-based alloys.
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Funding
The authors would like to thank the financial supports of the Science and Technology Major Project of Yunnan Province (Grant No. 2019ZE001-3, 202202AB080001), the National Natural Science Foundation of China (Grant No. 52061021), and the Young and middle–aged academic and technical leaders reserve talent project of Yunnan Province (Grant No. 202005AC160039).
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KX: Data curation, Writing—original draft. CL: Writing—review & editing. PG: Methodology. JQ: Resources. SG: Conceptualization. LZ: Investigation. JZ: Supervision. QH: Visualization. JP: Validation. JY: Project administration.
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Xiao, K.X., Li, C.J., Gao, P. et al. Significantly enhanced ductility of Sn–57Bi–1Ag alloy induced by microstructure modulation from in addition. J Mater Sci: Mater Electron 34, 1551 (2023). https://doi.org/10.1007/s10854-023-10946-1
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DOI: https://doi.org/10.1007/s10854-023-10946-1