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Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer

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Abstract

We have identically produced 70 dots of Au/SnO2/n-Si Schottky diodes using spray deposition method and investigated the mean values of diode parameters using current–voltage (I–V) measurements at room temperature. The ideality factor (n) and barrier height (\({\varPhi }_\text{B}\)) calculated using thermionic emission model were determined to be temperature dependent. The \({\varPhi }_\text{B}\) and \(n\) for 70 dots of the varied from diode to diode have ranged from 0.672 to 0.729 eV and 2.60 to 2.97, respectively. Mean ideality factor and barrier height values were found as 2.76 and 0.700 eV, respectively. We have estimated a lateral homogeneous barrier height value of 0.746 eV for 70 dots of the Au/SnO2/n-Si diodes from the linear relationship between the experimental ideality factors and barrier heights. The correlation between \({\varPhi }_\text{B}\) and \(n\) of the identically fabricated the diodes was clarified by lateral inhomogeneities of \({\varPhi }_\text{B}\).

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Acknowledgements

N. Tuğluoğlu acknowledges Giresun University BAP Project Office, Giresun, Turkey for a financial support (FEN-BAP-A-250221-21).

Funding

This work was supported by the Giresun University BAP Project Office (No: FEN-BAP-A-250221-21).

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Authors and Affiliations

  1. Department of Energy Systems Engineering, Giresun University, Giresun, Turkey

    Nihat Tuğluoğlu & Serkan Eymur

  2. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    Neslihan Turan

Authors
  1. Nihat Tuğluoğlu
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  2. Serkan Eymur
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  3. Neslihan Turan
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection, and analysis were completed by NT. The first draft of the manuscript was written by NT and NT, and the experimental tests were carried out by NT, SE and NT. The manuscript was revised by NT, SE and NT. All authors have commented on previous manuscript versions. All authors read and approved the final manuscript.

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Correspondence to Nihat Tuğluoğlu.

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Tuğluoğlu, N., Eymur, S. & Turan, N. Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer. J Mater Sci: Mater Electron 34, 160 (2023). https://doi.org/10.1007/s10854-022-09659-8

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