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Raman scattering, electronic transport and dielectric features of Co-doped DyCrO3

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Abstract

DyCr1−xCoxO3 (0 ≤ x ≤ 0.3) system synthesized through sol–gel auto-combustion process is investigated to study the impact of cobalt (Co) doping on physical features and conduction mechanism of DyCrO3. X-ray diffraction data affirm the single-phase nature of this system that conforms in orthorhombic crystal symmetry with Pbnm space group. Raman spectra display the variation in intensity and position of Raman bands on doping. The broadening of full-width at half-maximum (FWHM) in case of doped samples indicates the structural distortion due to Co doping. Transmission electron microscopy (TEM) images reveal the nano-sized spherical particles, and the clearly distinguishable planes in high-resolution TEM images establish the crystalline nature of these samples. D.C. resistivity declines with the increase in Co doping, and resistivity data fit well to small-polaron hopping and variable-range hopping models. The dielectric permittivity plots for all the samples exhibit dielectric peak which may be related to those of weak ferroelectric systems. The Cole–Cole plots exhibit depressed semi-circular patterns which suggest the non-Debye nature and the distributed relaxation times. The temperature dependence of imaginary part of electric modulus (M″) shows relaxation peaks at relatively lower temperatures. The a.c. conductivity (\({\sigma }_{\mathrm{ac}}\)) shows gradual increase with the rise in Co doping, especially near the room temperature. The temperature dependence of the exponent factor ‘n’ suggests that correlated barrier hopping and non-overlapping small-polaron tunnelling models govern the conduction mechanism in this system.

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  1. Department of Physics, Aligarh Muslim University, Aligarh, 202002, India

    Aref A. A. Qahtan, Shahid Husain, Naima Zarrin, Anand Somvanshi, Mehroosh Fatema & Wasi Khan

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Qahtan, A.A.A., Husain, S., Zarrin, N. et al. Raman scattering, electronic transport and dielectric features of Co-doped DyCrO3. J Mater Sci: Mater Electron 32, 15108–15133 (2021). https://doi.org/10.1007/s10854-021-06062-7

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