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Implantation of low-energy Ni12+ ions to change structural and strength characteristics of ceramics based on SiC

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Abstract

The paper presents results of studying the applicability of ion implantation to increase the strength characteristics and corrosion resistance of carbide ceramics. According to the X-ray phase analysis, it was found that an increase in the irradiation fluence leads to a slight change in the magnitudes of displacements and defect concentration, which indicates the absence of amorphization processes of the crystal structure. It is established that a decrease in the lattice volume leads to an increase in ceramics density and a decrease in porosity. In this case, a change in the average crystallite size leads to a change in the concentration of dislocation defects near the grain boundaries, which also indicates a change in the defect structure as a result of irradiation. A decrease in the integral porosity of the surface layer, as well as changes in the dislocation and vacancy densities in the surface layer of ceramics, leads to an increase in the strength and crack resistance of the surface layer. That has a significant effect on reducing the rate of degradation of ceramics in aggressive media.

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Authors and Affiliations

  1. L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan

    K. Tinishbaeva, K. K. Kadyrzhanov & M. V. Zdorovets

  2. The Institute of Nuclear Physics of Republic of Kazakhstan, Nur-Sultan, Kazakhstan

    A. L. Kozlovskiy & M. V. Zdorovets

  3. Kazakh-Russian International University, Aktobe, Kazakhstan

    A. L. Kozlovskiy

  4. Belarusian State University, Minsk, Belarus

    V. V. Uglov

  5. Ural Federal University, Yekaterinburg, Russia

    M. V. Zdorovets

Authors
  1. K. Tinishbaeva
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  2. K. K. Kadyrzhanov
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  3. A. L. Kozlovskiy
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  4. V. V. Uglov
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  5. M. V. Zdorovets
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Correspondence to A. L. Kozlovskiy.

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Tinishbaeva, K., Kadyrzhanov, K.K., Kozlovskiy, A.L. et al. Implantation of low-energy Ni12+ ions to change structural and strength characteristics of ceramics based on SiC. J Mater Sci: Mater Electron 31, 2246–2256 (2020). https://doi.org/10.1007/s10854-019-02756-1

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  • DOI: https://doi.org/10.1007/s10854-019-02756-1

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