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Antiferroelectric thick film grown on metal foils with fast discharge speed and excellent energy-storage properties

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Abstract

Antiferroelectric (AFE) Pb0.94La0.04Zr0.97Ti0.03O3 (PLZT) thick film was successfully fabricated on nickel foils by using sol–gel method. The film exhibits dense microstructure with low surface roughness and pure perovskite phase. It displays high dielectric constant of 433 at 100 kHz and room temperature, which is 28% larger than that on traditional silicon substrate. Calculated by polarization-field (P–E) hysteresis loop, the recoverable energy-storage density (Wrec) of 18.4 J/cm3 and the efficiency (Ƞ) value of 54% at 1400 kV/cm are obtained in the thick film. Measured by resistance–inductance–capacitance (RLC) circuit, the maximum pulsed discharge energy-storage density (Wdis) of 12.4 J/cm3 is found at the same electric field of 1400 kV/cm. Moreover, 90% of the energy is released in a short time of about 84 ns, displaying super-fast discharging characteristic. The AFE film with high discharge energy-storage density and fast discharge time provides strong potential for the application in modern electronics and electrical power systems.

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Acknowledgement

The authors would like to acknowledge the financial support from the Natural Science Foundation of Inner Mongolia (2015JQ04, 2017BS0503), the Natural Science Foundation of China (51702169), the Program for Innovative Research Team in Universities of Inner Mongolia Autonomous Region (NMGIRT-A1605), the Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region, the Grassland Talent Plan of Inner Mongolia Autonomous Region, the Innovation Guide Fund of Baotou (CX2017-58) and the Innovation Fund of Inner Mongolia University of Science and Technology (2014QNGG01, 2016QDL-S01, 2016QDL-B03), Fundamental Research Funds for the Central Universities (2232018D-39), and the Innovation Guide Fund for Science and Technology of Inner Mongolia Autonomous Region (KCBJ2018034).

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Authors and Affiliations

  1. Inner Mongolia Key Laboratory of Ferroelectric-related New Energy Materials and Devices, Baotou, 014010, China

    Ying Zhang, Yong Li, Jinghua Du, Ningning Sun & Xihong Hao

  2. College of Science, Donghua University, Shanghai, 201620, China

    Haitao Jiang

  3. School of Materials Science & Engineering, Tongji University, Shanghai, 201804, China

    Jiwei Zhai

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  1. Ying Zhang
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  2. Yong Li
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Correspondence to Xihong Hao.

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Zhang, Y., Li, Y., Du, J. et al. Antiferroelectric thick film grown on metal foils with fast discharge speed and excellent energy-storage properties. J Mater Sci: Mater Electron 30, 11945–11951 (2019). https://doi.org/10.1007/s10854-019-01545-0

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