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Microstructure and crystallization kinetics of Ge2Sb2Te5–Sn phase change materials

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Abstract

In this paper, the effects of Sn doping on the microstructure and electrical properties of amorphous and crystalline Ge2Sb2Te5 thin films are reported. The thin films bonding states are measured through X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy, which prove that the bonding states of Ge2Sb2Te5–Sn thin films regularly change with the additions of various Sn contents. Sn atoms alter the chemical surrounding of Te atoms significantly, having a low impact on the bonding environment of Sb atoms, since the additional Sn atoms bond with Te atoms and lead to the SnTe phase formation. Both the homogeneity of bonding characteristics and crystallinity in Ge2Sb2Te5–Sn thin films are improved. The atomic arrangement of the crystalline states Ge2Sb2Te5–Sn thin films is also obtained. It could be inferred that the Sn addition lead to higher crystalline interplanar spacing and arrangement of many disordered atoms. Furthermore, the corresponding activation energy value (EA) of Ge2Sb2Te5–Sn thin films is calculated. This display that the EA values of Ge2Sb2Te5–Sn increase compared to the pure Ge2Sb2Te5 thin films, since the Ge2Sb2Te5–Sn thin film structures are stabilized due to the compressed bonds and various bonding states.

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References

  1. M. Wuttig, N. Yamada, Nat. Mater. 6, 824–832 (2007)

    Article  CAS  Google Scholar 

  2. D. Lencer, M. Salinga, B. Grabowski, T. Hickel, J. Neugebauer, M. Wuttig, Nat. Mater. 7, 972–977 (2008)

    Article  CAS  Google Scholar 

  3. M. Cassinerio, N. Ciocchini, D. Ielmini, Adv. Mater. 25, 5975–5980 (2013)

    Article  CAS  Google Scholar 

  4. J.Y. Cho, D. Kim, Y.J. Park, T.Y. Yang, Y.Y. Lee, Y.C. Joo, Acta Mater. 94, 143–151 (2015)

    Article  CAS  Google Scholar 

  5. S. Raoux, W. Wełnic, D. Ielmini, Chem. Rev. 110, 240–267 (2009)

    Article  Google Scholar 

  6. A. Vora-Ud, M. Rittiruam, M. Kumar., J.G. Han, T. Seetawan, Mater. Des. 89, 957–963 (2016)

    Article  CAS  Google Scholar 

  7. S. Lombardo, E. Rimini, M.G. Grimaldi, S. Priviterac, Microelectron. Eng. 87, 294–300 (2010)

    Article  CAS  Google Scholar 

  8. P. Nukala, C.C. Lin, R. Composto, R. Agarwal, Nat. Commun. 7, 10482 (2016)

    Article  CAS  Google Scholar 

  9. S. Raoux, W. Welnic, D. Ielmini, Chem. Rev. 110, 240–267 (2010)

    Article  CAS  Google Scholar 

  10. H.W. Ho, K. Bai, W.D. Song, T.L. Tan, R. Zhao, C.M. Ng, L. Wang, Acta Mater. 61, 1757–1763 (2013)

    Article  CAS  Google Scholar 

  11. A.V. Kolobov, P. Fons, A.I. Frenkel, A.L. Ankudinov, J. Tominaga, T. Uruga, Nat. Mater. 3, 703–708 (2004)

    Article  CAS  Google Scholar 

  12. K.S. Bang, S.Y. Lee, J. Nanosci. Nanotechnol. 16, 10917–10922 (2016)

    Article  CAS  Google Scholar 

  13. C. Koch, T. Dankwort, A.L. Hansen, M. Esters, D. Häußler, H. Volker, A. Hoegen, M. Wuttig, D.C. Johnson, W. Bensch, L. Kienle, Acta Mater. 152, 278–287 (2018)

    Article  CAS  Google Scholar 

  14. Z. Li, C. Si, J. Zhou, H. Xu, Z. Sun, ACS Appl. Mater. Interface 8, 26126–26134 (2016)

    Article  CAS  Google Scholar 

  15. B.G. Chae, J.B. Seol, J.H. Song, W.Y. Jung, H. Hwang, C.G. Park, Appl. Phys. Lett. 109, 112103 (2016)

    Article  Google Scholar 

  16. R. Kojima, N. Yamada, Jpn. J. Appl. Phys. 40, 5930–5937 (2001)

    Article  CAS  Google Scholar 

  17. J. Singh, G. Singh, A. Kaura, S.K. Tripathi, J. Electron. Mater. 45, 2950–2956 (2016)

    Article  CAS  Google Scholar 

  18. T. Akiyama, M. Uno, H. Kitaura, K. Narumi, R. Kojima, K. Nishiuchi, N. Yamada, Jpn. J. Appl. Phys. 40, 1598–1603 (2001)

    Article  CAS  Google Scholar 

  19. V.I. Shtanov, O.V. Zatolochnaya, K.Y. Veremeev, M.E. Tamm, O.E. Timofeeva, J. Alloys Compd. 476, 812–816 (2009)

    Article  CAS  Google Scholar 

  20. J.B. Williams, S. Mather, D.T. Morelli, J. Electron. Mater. 45, 1077–1084 (2016)

    Article  CAS  Google Scholar 

  21. J. Kumar, R. Thangaraj, T.S. Sathiaraj, J. Optoelectron. Adv. Mater. 14, 455–459 (2012)

    CAS  Google Scholar 

  22. V. Bragaglia, K. Holldack, J.E. Boschker, F. Arciprete, E. Zallo, T. Flissikowski, R. Calarco, Sci. Rep. 6, 28560 (2016)

    Article  CAS  Google Scholar 

  23. P. Němec, V. Nazabal, A. Moréac, J. Gutwirth, L. Bene, M. Frumar, Mater. Chem. Phys. 136, 935–941 (2012)

    Article  Google Scholar 

  24. J.H. Han, K.S. Jeong, M. Ahn, D.H. Lim, W.J. .Yang, S.J. Park, M.H. Cho, J. Mater. Chem. C 5, 3973–3982 (2017)

    Article  CAS  Google Scholar 

  25. S. Sahu, A. Manivannan, H. Shaik, G. Mohan Rao, J. Appl. Phys. 122, 015305 (2017)

    Article  Google Scholar 

  26. S. Kozyukhin, M. Veres, H.P. Nguyen, A. Ingram, V. Kudoyarova, Phys. Proced. 44, 82–90 (2013)

    Article  CAS  Google Scholar 

  27. N. Bai, F.R. Liu, X.X. Han, Z. Zhu, F. Liu, X. Lin, Appl. Surf. Sci. 316, 202–206 (2014)

    Article  CAS  Google Scholar 

  28. S.J. Park, M.H. Jang, M.H. Cho, D.H. Ko, Appl. Surf. Sci. 258, 9786–9791 (2012)

    Article  CAS  Google Scholar 

  29. R. De Bastiani, A.M. Piro, M.G. Grimaldi, E. Rimini, G.A. Baratta, G. Strazzulla, Appl. Phys. Lett. 92, 241925 (2008)

    Article  Google Scholar 

  30. S. Sandhu, D. Singh, S. Kumar, R. Thangaraj, J. Ovonic Res. 10, 397–412 (2014)

    Google Scholar 

  31. G. Singh, A. Kaura, M. Mukul, S.K. Tripathi, J. Mater. Sci. 48, 299–303 (2013)

    Article  CAS  Google Scholar 

  32. M.L. Lee, K.T. Yong, C.L. Gan, H.T. Lee, S.B.M. Daud, L.P. Shi, J. Phys. D 41, 215402 (2008)

    Article  Google Scholar 

  33. S. Sahu, S.K. Pandey, A. Manivannan, U.P. Deshpande, V.G. Sathe, V.R. Reddy, M. Sevi, Phys. Status Solidi (b) 253, 1069–1075 (2016)

    Article  CAS  Google Scholar 

  34. R. Golovchak, Y.G. Choi, S. Kozyukhin, Y. Chigirinsky, A. Kovalskiy, P. Xiong-Skiba, J. Trimble, R. Pafchek, H. Jain, Appl. Surf. Sci. 332, 533–541 (2015)

    Article  CAS  Google Scholar 

  35. Z. Zhu, F.R. Liu, Z.M. Wang, Z.K. Fan, F. Liu, N.X. Sun, Appl. Surf. Sci. 335, 184–188 (2015)

    Article  CAS  Google Scholar 

  36. S. Caravati, M. Bernasconi, T.D. Kühne, M. Krack, M. Parrinello, J. Phys.: Condens. Matter 21, 255501 (2009)

    CAS  Google Scholar 

  37. X.Q. Liu, X.B. Li, L. Zhang, Y.Q. Cheng, Z.G. Yan, M. Xu, X.D. Han, S.B. Zhang, Z. Zhang, E. Ma, Phys. Rev. Lett. 106, 025501 (2011)

    Article  CAS  Google Scholar 

  38. I. Hilmi, A. Lotnyk, J.W. Gerlach, P. Schumacher, B. Rauschenbach, Mater. Des. 115, 138–146 (2017)

    Article  CAS  Google Scholar 

  39. S. Shamoto, N. Yamada, T. Matsunaga, T. Proffen, J.W. Richardson Jr., J.H. Chung, T. Egami, Appl. Phys. Lett. 86, 081904 (2005)

    Article  Google Scholar 

  40. T. Chong, H. Koon, Jpn. J. Appl. Phys. 46, 2211–2214 (2007)

    Article  Google Scholar 

  41. J. Tominaga, T. Shima, P. Fons, R. Simpson, M. Kuwahara, A. Kolobov, Jpn. J. Appl. Phys. 48, 03A053 (2009)

    Article  Google Scholar 

  42. I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, M. Wuttig, J. Appl. Phys. 87, 4130–4134 (2000)

    Article  CAS  Google Scholar 

  43. S. Kozyukhin, V. Kudoyarova, H.P. Nguyen, A. Smirnov, V. Lebedev, Phys. Status Solidi (c) 8, 2688–2691 (2011)

    Article  CAS  Google Scholar 

  44. A.V. Kolobov, M. Krbal, P. Fons, J. Tominaga, T. Uruga, Nat. Chem. 3, 311–316 (2011)

    Article  CAS  Google Scholar 

  45. X. Zhou, J. Kalikka, X. Ji, L. Wu, Z. Song, R.E. Simpson, Adv. Mater. 28, 3007–3016 (2016)

    Article  CAS  Google Scholar 

Download references

Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 51771023).

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  1. School of Materials Science and Engineering, University of Science and Technology Beijing, 30, Xueyuan Road, Beijing, 100083, China

    Qixun Yin & Leng Chen

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  1. Qixun Yin
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  2. Leng Chen
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Correspondence to Leng Chen.

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Yin, Q., Chen, L. Microstructure and crystallization kinetics of Ge2Sb2Te5–Sn phase change materials. J Mater Sci: Mater Electron 29, 16523–16533 (2018). https://doi.org/10.1007/s10854-018-9746-0

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