Abstract
Phase-change materials are identified by their ability to rapidly alternate between amorphous and crystalline phases upon heating, exhibiting large contrast in the optical/electrical properties of the respective phases. Such materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase-change materials studied today can be found on the pseudobinary (GeTe)1−x (Sb2Te3) x tie-line. Ge4SbTe5, a single-phase compound just off of the (GeTe)1−x (Sb2Te3) x tie-line, forms in a metastable rocksalt crystal structure at room temperature. It has been found that stoichiometric and undoped Ge4SbTe5 exhibits thermal conductivity of ~1.2 W/m-K at high temperature and a dramatic decrease in electrical resistivity at 623 K due to a structural phase transition, which leads to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. Introducing point defects via isoelectronic substitutions can be an effective means of reducing thermal conductivity and enhancing thermoelectric performance. We present a study of the effects of Sn substitution for Ge on the electrical and thermal transport properties of Ge4SbTe5.
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Williams, J.B., Mather, S. & Morelli, D.T. Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5 . J. Electron. Mater. 45, 1077–1084 (2016). https://doi.org/10.1007/s11664-015-4221-7
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DOI: https://doi.org/10.1007/s11664-015-4221-7