Abstract
A computational study on stable hexagonal phase of undoped, and Sn- and Pb-doped Ge2Sb2Te5 (GST) phase change materials has been carried out. The electronic structure, lattice dynamics and thermoelectric properties of doped GST have been extensively investigated using ab initio methods with virtual crystal approximation. The hexagonal symmetry of the GST is maintained with the addition of Sn and Pb dopants. The lattice parameters and atomic volume of the Sn-doped GST structure is larger than that of the undoped GST. Electronic band structure calculations show that there is an increase in band gap with the increase in the concentration of Sn (≤4.4 at.%). However, with the addition of a very small amount of Pb, there is a continuous decrease in lattice parameters and band gap values. The calculated energy band structure is then used in combination with the Boltzmann transport equation to calculate the thermoelectric parameters of GST and Sn- and Pb-doped materials. Seebeck coefficient (S), electronic thermal conductivity (κ e) and the thermoelectric figure-of-merit (ZT) have been calculated with the help of BoltzTraP code. It was found that the thermoelectric properties of GST are enhanced with the addition of Sn.
Similar content being viewed by others
References
R. Venkatasubramanian, E. Siivola, T. Colpitts, and B. O’Quinn, Nature 413, 597 (2001).
T.C. Harman, P.J. Taylor, M.P. Walsh, and B.E. LaForge, Science 297, 2229 (2002).
D. Suh, C. Kim, H.P. Kim, Y. Kang, T. Lee, Y. Khang, T. Park, Y. Yoon, J. Im, and J. Ihm, Appl. Phys. Lett. 96, 123115 (2010).
S.R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968).
M. Wuttig and N. Yamada, Nat. Mater. 6, 824 (2007).
T. Matsunaga, H. Morita, R. Kojima, N. Yamada, K. Kifune, Y. Kubota, Y. Tabata, J.J. Kim, M. Kobata, E. Ikenaga, and K. Kobayashi, J. Appl. Phys. 103, 093511 (2008).
P.P. Konstantinov, L.E. Shelimova, M.A. Avilov, M.A. Kretova, and V.S. Zemskov, Inorg. Mater. 37, 662 (2001).
S.A. Baily, D. Emin, and H. Li, Solid State Commun. 139, 161 (2006).
K.S. Siegert, F.R.L. Lange, E.R. Sittner, H. Volker, C. Schlockermann, T. Siegrist, and M. Wuttig, Rep. Prog. Phys. 78, 013001 (2015).
L.E. Shelimova, O.G. Karpinskii, P.P. Konstantinov, M.A. Kretova, E.S. Avilov, and V.S. Zemskov, Inorg. Mater. 37, 342 (2001).
F. Yan, T.J. Zhu, X.B. Zhao, and S.R. Dong, Appl. Phys. A 88, 425 (2007).
M.N. Schneider, T. Rosenthal, C. Stiewe, and O. Oeckler, Z. Kristallogr. 225, 463 (2010).
T. Rosenthal, M.N. Schneider, C. Stiewe, D. Markus, and O. Oeckler, Chem. Mater. 23, 43 (2011).
J. Sun, S. Mukhopadhyay, A. Subedi, T. Siegrist, and D.J. Singh, Appl. Phys. Lett. 106, 123907 (2015).
S.J. Wei, H.F. Zhu, K. Chen, D. Xu, J. Li, and F.X. Gan, Appl. Phys. Lett. 98, 231910 (2011).
G. Singh, A. Kaura, M. Mukul, and S.K. Tripathi, J. Mater. Sci. 48, 299 (2013).
T. Rosenthal, T. Schroeder, P. Urban, S. Welzmiller, C. Stiewe, J.D. Boor, and O. Oeckler, 32nd International Conference on Thermoelectrics (Kobe, June 30–July 04, 2013).
G. Singh, A. Kaura, M. Mukul, J. Singh, and S.K. Tripathi, Appl. Phys. A 117, 1307 (2014).
J.L.F. Da Silva, A. Walsh, and H. Lee, Phys. Rev. B 78, 224111 (2008).
Z. Sun, J. Zhou, and R. Ahuja, Phys. Rev. Lett. 96, 055507 (2006).
X. Gonze, B. Amadon, P.M. Anglade, J.M. Beuken, F. Bottin, P. Boulanger, F. Bruneval, D. Caliste, R. Caracas, M. Cote, T. Deutsch, L. Genovese, P. Ghosez, M. Giantomassi, S. Goedecker, D.R. Hamann, P. Hermet, F. Jollet, G. Jomard, S. Leroux, M. Mancini, S. Mazevet, M.J.T. Oliveira, G. Onida, Y. Pouillon, T. Rangel, G.M. Rignanese, D. Sangalli, R. Shaltaf, M. Torrent, M.J. Verstraete, G. Zerah, and J.W. Zwanziger, Comput. Phys. Commun. 180, 2582 (2009).
J.P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
N. Troullier and J.L. Martins, Phys. Rev. B 43, 1993 (1991).
H.J. Monkhorst and J.D. Pack, Phys. Rev. B 13, 5188 (1976).
T.H. Fischer and J. Almlof, J. Phys. Chem. 96, 9768 (1992).
L. Bellaiche and D. Vanderbilt, Phys. Rev. B 61, 7877 (2000).
G.K.H. Madsen and D.J. Singh, Comput. Phys. Commun. 175, 67 (2006).
I.I. Petrov, R.M. Immov, and Z.G. Pinker, Sov. Phys. Crystallogr. 13, 339 (1968).
B.J.J. Kooi and T.M. De Hosson, J. Appl. Phys. 92, 3584 (2002).
T. Matsunaga, N. Yamada, and Y. Kabota, Acta Crystallogr. B 60, 685 (2004).
Z. Sun, J. Zhou, and R. Ahuja, Phy. Rev. Lett. 96, 055507 (2006).
T. Kaewmaraya, M. Ramzan, H. Löfås, and R. Ahuja, J. Appl. Phys. 113, 033510 (2013).
J. Zhoua, Z. Suna, L. Xub, and R. Ahuja, Solid State Commun. 148, 113 (2008).
D.R. Lide, Handbook of Chemistry and Physics, 84th ed. (Boca Raton: CRC, 2003).
J. Kumar, M. Ahmad, R. Chander, R. Thangaraj, and T.S. Sathiaraj, Eur. Phys. J. Appl. Phys. 41, 13 (2008).
S. Welzmiller, T. Rosenthal, P. Ganter, L. Neudert, F. Fahrnbauer, P. Urban, C. Stiewe, J.D. Boor, and O. Oeckler, Dalton Trans. 43, 10529 (2014).
T.J. Park, S.Y. Choi, and M.J. Kang, Thin Solid Films 515, 5049 (2007).
T. Kato and K. Tanaka, Jpn. J. Appl. Phys. 44, 7340 (2005).
E.M. Vinod, K. Ramesh, and K.S. Sangunni, Sci. Rep. 5, 8050 (2015).
X. Cheng, L. Bo, S.Z. Tang, F.S. Lin, and C. Bomy, Chin. Phys. Lett. 22, 2929 (2005).
J.M. Besson, J. Cernogora, and R. Zallen, Phys. Rev. B 22, 3866 (1980).
A.M. Galvan and J.G. Hernandez, J. Appl. Phys. 87, 760 (2000).
J. Singh, G. Singh, A. Kaura, and S.K. Tripathi, AIP Conf. Proc. 1665, 090014 (2015).
J. Lee, E.B. Grayeli, S. Kim, M. Asheghi, H.S.P. Wong, and K.E. Goodson, Appl. Phys. Lett. 102, 191911 (2013).
J.H. Bahk and A. Shakouri, Appl. Phys. Lett. 105, 052106 (2014).
Acknowledgement
This work is financially supported by UGC [Major Research Project: F.No. 42-781/2013(SR)]. One of the authors, Janpreet Singh is grateful to UGC for providing financial support. They are also greatly indebted to the HPCC cluster support team, Department of Physics, Panjab University, Chandigarh, India, for providing an opportunity to carry out simulations on their cluster.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Singh, J., Singh, G., Kaura, A. et al. Electronic and Thermoelectric Properties of Layered Sn- and Pb-Doped Ge2Sb2Te5 Alloys Using First Principle Calculations. J. Electron. Mater. 45, 2950–2956 (2016). https://doi.org/10.1007/s11664-016-4416-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-016-4416-6