Abstract
In this study, lead-free (Na, K)NbO3 films were successfully deposited by RF magnetron sputtering and subsequent annealing treatment, in which a KNN atmosphere was projected to prevent the alkali metal volatilization. Effects of annealing temperatures on structure and electrical properties of the KNN thin films were investigated systematically. The results show that, with the temperature increasing, the KNN films started crystallization accompanying with volatilization of alkaline elements as well as phase transition. The particle size and surface quality of the film closely depended on annealing temperature and atmosphere. The (100) preferred orientation, large grain size, dense morphology, and annealing atmosphere all benefited the electrical properties of the KNN films. Notablely, the KNN films deposited at 200 °C and subsequent annealed at 650 °C showed a well polarization of 2P r = 20.8 μC/cm2 and coercive field 2E c of 200 kV/cm.
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Acknowledgments
This work was supported by Jiangsu Postdoctoral Scientific Research Fund (1202016C) and the National Nature Science Foundation of China (51172108), A project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions.
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Huang, J., Liu, J., Li, Z. et al. Effects of annealing temperature on structure and electrical properties of (Na, K)NbO3 thin films grown by RF magnetron sputtering deposition. J Mater Sci: Mater Electron 27, 899–905 (2016). https://doi.org/10.1007/s10854-015-3832-3
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DOI: https://doi.org/10.1007/s10854-015-3832-3