Abstract
In this work, PTFE composites filled with Aluminum Nitride (AlN) were prepared by powder processing technique. The microstructure of AlN particles and the composites were investigated by scanning electron microscopic method. The effect of different weight fraction of AlN (0–0.6) on the dielectric, thermal, mechanical properties of the composites was investigated. All composites exhibited excellent thermal stability endowed by PTFE matrix. The dielectric constant and dielectric loss of the sample with 50 wt% of AlN filler was 4.2 and 0.006, at 1 MHz. The dielectric constant of the composites showed only a very small variation with frequency in the range 100–1 MHz. Several theoretical models were used to compare with experimental data of the dielectric constant of the composites. EMT model showed the best correlation with the experimental results.
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Acknowledgments
This work was financially supported by the National Science Foundation of China (No. 51407134), China Postdoctoral Science Foundation (No. 2014M562412) and China Postdoctoral Science Special Foundation (No. 2015T81028).
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Pan, C., Kou, K., Wu, G. et al. Fabrication and characterization of AlN/PTFE composites with low dielectric constant and high thermal stability for electronic packaging. J Mater Sci: Mater Electron 27, 286–292 (2016). https://doi.org/10.1007/s10854-015-3752-2
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DOI: https://doi.org/10.1007/s10854-015-3752-2