Abstract
The initial stages of defect generation in magnesia (MgO) single crystals irradiated with 1.2 MeV Au+ ions at 573, 773, and 1073 K and at different fluences have been studied. High-resolution X-ray diffraction was used to measure the irradiation-induced elastic strain. Point-defect relaxation volumes were computed using density functional theory calculations. The defect concentration was then calculated. It was found to increase with ion fluence at all temperatures, with maximum values being ~0.46 % at 573 K, ~0.24 % at 773 K, and ~0.13 % at 1073 K. The decrease in the maximum strain with increasing temperature indicates a dynamic annealing. The defect generation efficiencies were found to be very low and the values obtained were in the range of ~2.4, 1.2, and 0.6 % at 573, 773, and 1073 K, respectively. An annealing effect due to electronic energy deposition is suspected to explain these low values.
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Acknowledgements
Authors would like to acknowledge the SEMIRAMIS staff for carrying out ion irradiation. XRD measurements on the Panalytical diffractometer have been performed at the nanocenter CTU-IEF-Minerve that is partially funded by the “Conseil Général de l’Essonne.” DBP acknowledges Campus France for the Eiffel Excellence scholarship and Universidad Autónoma de Madrid for the FPI scholarship. Authors would like to thank S. Mylonas for fruitful discussions.
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Bachiller-Perea, D., Debelle, A., Thomé, L. et al. Study of the initial stages of defect generation in ion-irradiated MgO at elevated temperatures using high-resolution X-ray diffraction. J Mater Sci 51, 1456–1462 (2016). https://doi.org/10.1007/s10853-015-9465-3
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DOI: https://doi.org/10.1007/s10853-015-9465-3