Abstract
Two-dimensional (2D) analytical model for the subthreshold characteristics like Surface potential, threshold voltage, subthreshold current and swing of uniformly doped, high-k gate stack double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed in this paper. The minimum surface potential obtained by solving the 2D Poisson’s equation using evanescent mode analysis has been utilized to model the threshold voltage, subthreshold current and subthreshold swing. The effects of various parameters on these parameters have also been presented. The results show excellent matching with the numerical simulation data obtained by ATLAS™, a 2D device simulator from SILVACO.
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The author would like to thank Prof. Satyabrata Jit, Professor (HAG) Indian Institute of Technology, Varanasi, for needful support.
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Goel, E. Impact of High-K Gate Stack on Subthreshold Performance of Double-Gate (DG) MOSFETs. Silicon 14, 11539–11544 (2022). https://doi.org/10.1007/s12633-022-01891-5
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DOI: https://doi.org/10.1007/s12633-022-01891-5