Abstract
We present a theoretical investigation of high-frequency electronic noise in field-effect transistors used as detectors of TeraHertz radiation. Calculations are performed using the hydrodynamic-Langevin approach and specialized to the case of InGaAs high-electron mobility transistors. The main physical phenomena associated with the effect of branching of the total current between channel and gate and the appearance of two-dimensional plasma waves are discussed. We demonstrate that thermally excited standing plasma waves originate series of resonant peaks in the corresponding noise spectral densities whose presence can be controlled by the embedding circuit. A significant damping of the high-frequency excess noise is found when the transistor is submitted to a two-lasers optical photo-excitation presenting a beating frequency in the TeraHertz range. Finally, we discuss the dependence of the damping effect, as well as a shift of the resonance peaks from the presence of channel ungated regions.
Similar content being viewed by others
References
Blin, S., Tohme, L., Hisatake, S., Arakawa, K., Nouvel, P., Coquillat, D., Penarier, A., Torres, J., Varani, L., Knap, W., Nagatsuma, T.: Plasma-wave detectors for terahertz wireless communication. Electron. Lett. 33, 1354–1356 (2012)
Shiktorov, P., Starikov, E., Gružzinskis, V., Varani, L., Sabatini, G., Marinchio, H., Reggiani, L.: Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels. J. Stat. Mech Theory Exp. 2009(01), 01047 (2009)
Dyakonov, M., Shur, M.: Plasma wave electronics: novel terahertz devices using two dimensional electron fluid. IEEE Trans. Electron. Devices 43, 1640–1645 (1996)
Millithaler, J.-F., Reggiani, L., Pousset, J., Varani, L., Palermo, C., Knap, W., Matéos, J., González, T., Pérez, S., Pardo, D.: Monte Carlo investigation of terahertz plasma oscillations in ultrathin layers of n-type \(\text{ In }_{0.53}\text{ Ga }_{0.47}\)As. Appl. Phys. Lett. 92, 042113 (2008)
Nouvel, P., Torres, J., Blin, S., Marinchio, H., Laurent, T., Palermo, C., Varani, L., Shiktorov, P., Starikov, E., Gružinskis, V., Teppe, F., Roelens, Y., Shchepetov, A., Bollaert, S.: TeraHertz emission induced by optical beating in nanometer-length field-effect transistors. J. Appl. Phys. 111, 103707 (2012)
Nouvel, P., Marinchio, H., Torres, J., Palermo, C., Gasquet, D., Chusseau, L., Varani, L., Shiktorov, P., Starikov, E., Gružinskis, V.: Terahertz spectroscopy of optically excited resonant plasma waves in high electron mobility transistor. J. Appl. Phys. 106, 013717 (2009)
Marinchio, H., Chusseau, L., Torres, J., Nouvel, P., Varani, L., Sabatini, G., Palermo, C., Shiktorov, P., Starikov, E., Gružinskis, V.: Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor. Appl. Phys. Lett. 96, 013502 (2010)
Marinchio, H., Palermo, C., Sabatini, G., Varani, L., Shiktorov, P., Starikov, E., Gružinskis, V.: Pseudo-two-dimensional Poisson equation for the modeling of field-effect transistors. J. Comput. Electron. 9(3–4), 141–145 (2010)
Shiktorov, P., Starikov, E., Gružinskis, V., Pérez, S., González, T., Reggiani, L., Varani, L., Vaissière, J.C.: Upconversion of partition noise in semiconductors operating under periodic large-signal conditions. Phys. Rev. B 67, 165201 (2003)
Torres, J., Marinchio, H., Nouvel, P., Sabatini, G., Palermo, C., Varani, L., Chusseau, L., Shiktorov, P., Starikov, E., Gružinskis, V.: Plasma waves subterahertz optical beating detection and enhancement in long-channel high-electron-mobility transistors: experiments and modeling. IEEE J. Select. Top. Quant. Electron. 14, 491 (2008)
Acknowledgments
This work is partially supported by Grant No. MIP-058/2013 of the Research council of Lithuania. The support of TeraLab-Montpellier is also acknowledged.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Palermo, C., Marinchio, H., Shiktorov, P. et al. TeraHertz electronic noise in field-effect transistors. J Comput Electron 14, 87–93 (2015). https://doi.org/10.1007/s10825-014-0657-x
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10825-014-0657-x