Abstract
The paper investigates the peel test of an elastic–plastic film on an elastic substrate. The case of a film material presenting a saturation of the yield stress is considered. Based on earlier approaches of the literature, see for instance Kim and Aravas (Int J Solids Struct 24:417–435, 1988), a semi-analytical expression for the work done by bending plasticity is proposed. The validity of the present expression is established based on finite element calculations. It is shown that for the interpretation of the results of peel test at 90\(^{\circ }\) when the peel force and the curvature are measured, the present approach can provide a precise value of the interface fracture energy.
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Acknowledgements
The authors acknowledge the support of Agence Nationale de Recherche through the program Labcom LEMCI ANR-14-LAB7-0003-01. The research leading to these results has received funding from the European Union’s Horizon 2020 research and innovation programme (Excellent Science, Marie Sklodowska-Curie Actions) under REA Grant Agreement 675602 (OUTCOME project).
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Appendix A: Derivation of the expression for the work done by bending plasticity
Appendix A: Derivation of the expression for the work done by bending plasticity
The present appendix provides some details concerning the derivation of the expression for the work done by bending plasticity \({\varPsi }\) along the loading path (OABCD). From the elastic response of the film along path (OA), as depicted in Fig. 1b, one obtains based on Eq. (6):
Since for a thin copper film, the curvature \(K_B\) is larger than \(K_e\), one needs to evaluate the contribution to \({\varPsi }\) along (AB). The relationship between the moment M and the curvature K is given by Eq. (10). With the definition \(F\left( -\frac{2 \gamma K}{\sqrt{3}}, \frac{t}{2}\right) {=} -\exp \left( {-}\frac{\gamma K t}{\sqrt{3}}\right) \left( \frac{t\sqrt{3}}{4\gamma K}+\frac{3}{4 \gamma ^2 K^2}\right) \), and with a change of variable \(u=\frac{\gamma K t}{\sqrt{3}}\), one easily gets:
where \(G(x,y) =\frac{\exp (xy)}{y}\). The contribution linked to the term \(F\left( -\frac{2 \gamma K}{\sqrt{3}}, h\right) \) with \(h=\frac{\sigma _o \sqrt{3}}{2 E K}\) is evaluated in a straightforward manner, so the work done by bending plasticity along the path (AB) is:
For the unloading path (BC), the contribution to \({\varPsi }\) is readily obtained:
The last term corresponding to the reverse plastic loading phase (CD) is the most complex contribution. Indeed, the expression of M is given by Eq. (15) where an integral term is already present. In addition, it is related to the position of the elastic–plastic transition surface \(h^{'}\) defined by an implicit relation (13). Therefore one can simply notice that:
where the term I is defined by Eq. (22). As mentioned in Sect. 2, for a metallic film with large values of \(K_B\) and \(\gamma \), the accumulated strain Eq. (14) (resp. \(h^{'}\)) can be approximated as proposed in Eq. (16) (resp. by \(h^{'}= \frac{\sqrt{3} \alpha }{E (K_B-K)}\)). After a standard mathematical development, the integral term I is evaluated and the approximate closed form expression Eq. (23) is found.
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Simlissi, E., Martiny, M., Mercier, S. et al. Elastic–plastic analysis of the peel test for ductile thin film presenting a saturation of the yield stress. Int J Fract 220, 1–16 (2019). https://doi.org/10.1007/s10704-019-00393-7
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DOI: https://doi.org/10.1007/s10704-019-00393-7