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Application of quantum dot gate FETs (QDGFETs) in ternary logic image inversion

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Abstract

Quantum dot gate FETs (QDGFET) produce one intermediate state between two stable on and off states due to the change in the threshold voltage. A circuit model based on Berkeley Short-channel IGFET Model that accounts for this intermediate state is developed. Different ternary logic inverters such as standard ternary inverter, positive ternary inerter, and negative ternary inverter can be designed using QDGFETs. In this work the application of different ternary logic inverter in image processing are discussed. The comparison of binary logic inverter and ternary logic inverter is also discussed. Comparison with other technology is also presented Increased number of states in three state QDGFETs will increase the image processing capacity of QDGFET based circuits.

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Acknowledgments

This work is an extension of author’s research work in his Ph.D. The author greatly acknowledges the discussions with Dr. John A. Chandy, and Dr. Faquir Jain, Department of Electrical Engineering, University of Connecticut.

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  1. Mellanox Technologies, Los Angeles, CA, USA

    Supriya Karmakar

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  1. Supriya Karmakar
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Correspondence to Supriya Karmakar.

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Karmakar, S. Application of quantum dot gate FETs (QDGFETs) in ternary logic image inversion. Analog Integr Circ Sig Process 87, 65–72 (2016). https://doi.org/10.1007/s10470-015-0673-1

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