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Organic WORM memory with carbon nanoparticle/epoxy active layer

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Abstract

Following the “All With One (AW1)” technology proposed in our earlier work, the present study is focused on the production and the characterization of write once read many (WORM) memory devices with a carbon nanoparticle/epoxy resin nanocomposite, where the main advantage stands on the ease of production of the nanostructured phase. The results revealed that short 100-ns, low-voltage (5.0-V) electric pulses are enough to record a bit, and the bit one to bit zero current state ratio \(I_\mathrm{{ON}}/I_\mathrm{{OFF}}\) reaches 10\(^{7}\).

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Acknowledgements

The authors thank Prof. Dr. I. A. Hümmelgen (Dept. of Physics, UFPR) for the use of laboratory facilities. We thank CAPES (Brazilian agency) for funding and CME—Centro de Microscopia Eletrônica da UFPR for the transmission electron microscopy and Raman scattering measurements.

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Authors and Affiliations

  1. Programa de Pós-Graduação em Física Universidade Federal do Paraná, CP 19044, 81531-990, Curitiba, PR, Brazil

    Andressa Toppel & Celso de Araujo Duarte

  2. Departamento de Física, Universidade Federal do Paraná, CP 19044, 81531-990, Curitiba, PR, Brazil

    Celso de Araujo Duarte

  3. Department of Applied Chemistry, University of Johannesburg, Doornfontein, PO Box 17011, Johannesburg, 2028, South Africa

    Messai Adenew Mamo

  4. DST-NRF Centre of Excellence in Strong Materials (CoE-SM), Johannesburg, South Africa

    Messai Adenew Mamo

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  1. Andressa Toppel
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  2. Celso de Araujo Duarte
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Correspondence to Celso de Araujo Duarte.

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Toppel, A., Duarte, C.d.A. & Mamo, M.A. Organic WORM memory with carbon nanoparticle/epoxy active layer. Appl. Phys. A 125, 2 (2019). https://doi.org/10.1007/s00339-018-2292-z

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