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Resistive Switching Properties in Copper Oxide–Graphene Oxide Nanocomposite-Based Devices for Flexible Electronic Applications

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Abstract

In this work, a CuO-GO nanocomposite-based device was fabricated which exhibited excellent free bipolar resistive switching (RS) phenomena. The device showed considerable switching performance such as low operating voltages, high OFF/ON resistance ratio (~103), uniformity, good endurance, and long retention (~104 s). The RS actions of the device were explained using an electric field-induced creation and annihilation of metal filaments in the CuO-GO layer. Owing to the growing demand for flexible electronics, the mechanical strength of the fabricated device has been realized for the different bending radii of the device. The proposed device showed potential towards flexible high-density data storage devices. Also, the devices showed a good resemblance with biological synapses.

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Acknowledgments

We are thankful to the respective universities for providing the necessary research facilities. The authors would also like to acknowledge Prof. Asim Roy, Department of Physics, NIT Silchar for providing research facilities.

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  1. Department of Physics, Cooch Behar Panchanan Barma University, Cooch Behar, West Bengal, 736101, India

    Nikita Ghosh, Abubakkar Siddik & Prabir Kumar Haldar

  2. Department of Applied Science and Humanities, Assam University, Silchar, 788011, India

    Pranab Kumar Sarkar

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  1. Nikita Ghosh
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Ghosh, N., Siddik, A., Sarkar, P.K. et al. Resistive Switching Properties in Copper Oxide–Graphene Oxide Nanocomposite-Based Devices for Flexible Electronic Applications. J. Electron. Mater. 53, 432–440 (2024). https://doi.org/10.1007/s11664-023-10767-2

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