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Effects of Cu content on non-Ohmic properties of CaCu3Ti4O12

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Abstract

The non-stoichiometric CaCu3+x Ti4O12 (x = 0, ±0.1, ±0.2, ±0.3) thin films were prepared by sol–gel method and sintered at 700 °C. X-ray diffraction and Scanning electron microscope were used to analyze phase compositions and the microstructure characteristics of the films. CuO and Cu2O secondary phases were detected in the non-stoichiometric samples. The non-Ohmic behaviors were determined by a semiconductor parameter analyzer. The results showed that the breakdown voltages of Cu non-stoichiometric samples were less sensitive to different voltage rise rate. Cu non-stoichiometry would result in the increase in nonlinear coefficients (α) and barrier heights (Φ B ). The breakdown voltages decreased with the increased environmental temperatures because of the intrinsic effect, which indicates the existence of back-to-back Schottky barriers at grain boundaries.

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Authors and Affiliations

  1. School of Electronic Information Engineering, Tianjin University, Tianjin, 300072, China

    Mi Xiao & Haixiao Huang

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  1. Mi Xiao
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  2. Haixiao Huang
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Correspondence to Mi Xiao.

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Xiao, M., Huang, H. Effects of Cu content on non-Ohmic properties of CaCu3Ti4O12 . Appl. Phys. A 122, 924 (2016). https://doi.org/10.1007/s00339-016-0461-5

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