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The improved performance in inverted organic light-emitting diodes using the hybrid-p-doped hole transport layer

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Abstract

The inverted organic light-emitting diodes (IOLEDs) have been fabricated using the hybrid-p-doped hole transport layer consisting of MoO3-doped N,N′-bis-(1-naphthl)-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB:MoO3) and 2,3,5,6-Tetrafluoro-7,7,8,8,-tetracyano-quinodimethane-doped NPB (NPB:F4-TCNQ). Compared with the IOLED using the 20 nm NPB:MoO3/Al, the one using the 10 nm NPB:F4-TCNQ/10 nm NPB:MoO3/Al showed increased performance, attributed to the higher conductivity of NPB:F4-TCNQ than NPB:MoO3, reducing the ohmic loss in hole conduction through the combined 10 nm NPB:F4-TCNQ and 10 nm NPB:MoO3 than through the 20 nm NPB:MoO3; it also presented improved performance than the IOLED using the 20 nm NPB:F4-TCNQ/Al, ascribed to the non-ohmic contact formation between NPB:F4-TCNQ and Al, resulting from that the p-doping effect of F4-TCNQ in NPB was significantly suppressed by the Al deposition in the interfacial zone. The hybrid p-doping of hole transport layer can offer a large space to promote the performance of IOLEDs.

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Acknowledgements

The authors are grateful for the financial supports from the National Science foundations of China (Grant No. 50803014) and Hebei Province (Grant No. E2013202119).

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Authors and Affiliations

  1. Institute of Polymer Science and Engineering, School of Chemical Engineering, Hebei University of Technology, Tianjin, 300130, People’s Republic of China

    Dashan Qin, Song Jin, Yuhuan Chen, Wenbo Wang & Li Chen

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  1. Dashan Qin
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  2. Song Jin
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  3. Yuhuan Chen
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Correspondence to Dashan Qin.

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Qin, D., Jin, S., Chen, Y. et al. The improved performance in inverted organic light-emitting diodes using the hybrid-p-doped hole transport layer. Appl. Phys. A 120, 651–655 (2015). https://doi.org/10.1007/s00339-015-9233-x

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