Abstract
This updated review summarizes the main theoretical approaches to model porous silicon electronic band structure, comparing effective mass theory, semiempirical and first-principles methods. In order to model its complex porous morphology, supercell, nanowire, and nanocrystal approaches are widely used. In particular, calculations of strain, doping, and surface chemistry effects on the band structure are discussed. The combined use of ab initio and tight-binding approaches to predict the band structure and properties of electronic devices based on porous silicon is put forward. Finally, recent trends in pSi theoretical modeling are discussed, highlighting the emerging use of molecular dynamics calculations.
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Tagüeña-Martínez, J., Wang, C. (2017). Electronic Band Structure in Porous Silicon. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-04508-5_51-2
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DOI: https://doi.org/10.1007/978-3-319-04508-5_51-2
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Latest
Electronic Band Structure in Porous Silicon- Published:
- 16 February 2017
DOI: https://doi.org/10.1007/978-3-319-04508-5_51-2
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Original
Electronic Band Structure in Porous Silicon- Published:
- 06 May 2014
DOI: https://doi.org/10.1007/978-3-319-04508-5_51-1