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Electronic Band Structure in Porous Silicon

Handbook of Porous Silicon

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Abstract

This chapter summarizes the main theoretical approaches to model the porous silicon electronic band structure, comparing effective mass theory, semiempirical, and first-principles methods. In order to model its complex porous morphology, supercell, nanowire, and nanocrystal approaches are widely used. In particular, calculations of strain, doping, and surface chemistry effects on the band structure are discussed. Finally, the combined use of ab initio and tight-binding approaches to predict the band structure and properties of electronic devices based on porous silicon is put forward.

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Authors and Affiliations

  1. Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Temixco, Morelos, 62580, México

    Julia Tagüeña-Martínez

  2. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, México, D.F. 04510, México

    Chumin Wang

Authors
  1. Julia Tagüeña-Martínez
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  2. Chumin Wang
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Correspondence to Julia Tagüeña-Martínez .

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Editors and Affiliations

  1. Malvern Hills Science Park, Chief Scientific Officer, Intrinsiq Mate, Malvern, Worcestershire, United Kingdom

    Leigh Canham

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Tagüeña-Martínez, J., Wang, C. (2014). Electronic Band Structure in Porous Silicon. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-04508-5_51-1

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  • DOI: https://doi.org/10.1007/978-3-319-04508-5_51-1

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  • Publisher Name: Springer, Cham

  • Online ISBN: 978-3-319-04508-5

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Chapter history

  1. Latest

    Electronic Band Structure in Porous Silicon
    Published:
    16 February 2017

    DOI: https://doi.org/10.1007/978-3-319-04508-5_51-2

  2. Original

    Electronic Band Structure in Porous Silicon
    Published:
    06 May 2014

    DOI: https://doi.org/10.1007/978-3-319-04508-5_51-1

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