Skip to main content
SpringerLink
Log in

Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots

  • Published:
Optical and Quantum Electronics Aims and scope Submit manuscript

Abstract

We report on the lateral transfer and thermal escape of carriers in InAs quantum dots (QDs) grown on a GaAs substrate by solid source molecular beam epitaxy by mean of photoluminescence (PL) and time-resolved PL measurements. The temperature-dependent PL spectra are discussed in terms of the inhomogeneous size distribution of the QDs and the carrier tunneling process from small to large QDs. The dependence of the photoluminescence decay time on the emission-wavelength is attributed to lateral carriers’ transfer within QDs with an interdot carrier tunneling time of 910 ps under low excitation conditions.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4

Similar content being viewed by others

References

  • Arakawa, Y., Sakaki, H.: Multidimensional quantum well laser and temperature dependence of its threshold current. Appl. Phys. Lett. 40, 939–941 (1982)

    Article  ADS  Google Scholar 

  • Dai, Y.T., Fan, J.C., Chen, Y.F., Lin, R.M., Lee, S.C., Lin, H.H.: Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses. J. Appl. Phys. 82, 4489–4492 (1997)

    Article  ADS  Google Scholar 

  • Duarte, C.A., da Silva, E.C.F., Quivy, A.A., da Silva, M.J., Martini, S., Leite, J.R., Meneses, E.A., Lauretto, E.: Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. J. Appl. Phys. 93, 6279–6283 (2003)

    Article  ADS  Google Scholar 

  • Eble, B., Testelin, C., Desfonds, P., Bernardot, F., Balocchi, A., Amand, T., Miard, A., Lemaitre, A., Marie, X., Chamarro, M.: Hole-nuclear spin interaction in quantum dots. Phys. Rev. Lett. 102, 146601–146604 (2009)

    Article  ADS  Google Scholar 

  • Faugeron, M., Lelarge, F., Tran, M., Robert, Y., Vinet, E., Enard, A., Jacquet, J., Van Dijk, F.: High peak power, narrow RF linewidth asymmetrical cladding quantum-dash mode-locked lasers. IEEE J. Sel. Top. Quantum Electron. 19, 1101008–11001017 (2013)

    Article  Google Scholar 

  • He, J., Zhang, Y.C., Xu, B., Wang, Z.G.: Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots. J. Appl. Phys. 93, 8898–8902 (2003)

    Article  ADS  Google Scholar 

  • Ilahi, B., Nasr, O., Paquette, B., Hadj Alouane, M.H., Chauvin, N., Salem, B., Sfaxi, L., Bru-Chevalier, C., Morris, D., Ares, R., Aimez, V., Maaref, H.: Thermally activated inter-dots carriers’ transfer in InAs QDs with InGaAs underlying layer: origin and dependence on the post-growth intermixing. J. Alloy. Compd. 656, 132–137 (2016)

    Article  Google Scholar 

  • Imamura, K., Sugiyama, Y., Nakata, Y., Muto, S., Yokoyama, N.: New optical memory structure using self-assembled InAs quantum dots. Jpn. J. Appl. Phys. 34, L1445–L1447 (1995)

    Article  ADS  Google Scholar 

  • Khan, M.Z.M., Ng, T.K., Lee, C.-S., Bhattacharya, P., Ooi, B.S.: Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission. Appl. Phys. Lett. 102, 091102–091104 (2013)

    Article  ADS  Google Scholar 

  • Kong, L., Chuan Feng, Z., Wu, Z., Lu, W.: Temperature dependent and time-resolved photoluminescence studies of InAs self-assembled quantum dots with InGaAs strain reducing layer structure. J. Appl. Phys. 106, 013512–013518 (2009)

    Article  ADS  Google Scholar 

  • Le Ru, E.C., Fack, J., Murray, R.: Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots. Phys. Rev. B 67, 245318–245329 (2003)

    Article  ADS  Google Scholar 

  • Lee, K.J., Jo, B., Lee, C., Lee, I.H., Kim, J.S., Oh, D.K., Kim, J.S., Lee, S.J., Noh, S.K., Leem, J.-Y., Ryu, M.-Y.: Carrier repopulation process for spatially-ordered InAs/InAlGaAs quantum dots. J. Appl. Phys. 109, 113505–113511 (2011)

    Article  ADS  Google Scholar 

  • Lelarge, F., Dagens, B., Renaudier, J., Brenot, R., Accard, A., Van Dijk, F., Make, D., Le Gouezigou, O., Provost, J., Poingt, F., Landreau, J., Drisse, O., Derouin, E., Rousseau, B., Pommereau, F., Guang-Hua, D.: Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm. IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007)

    Article  Google Scholar 

  • Liang, B.L., Wong, P.S., Pavarelli, N., Tatebayashi, J., Ochalski, T.J., Huyet, G., Huffaker, D.L.: Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface. Nanotechnology 22, 055706–055711 (2011)

    Article  ADS  Google Scholar 

  • Lubyshev, D.I., Gonzalez-Borrero, P.P., Mareda Jr., E., Petitprez, E., Lascala Jr., N., Basmaji, P.: Exciton localization and temperature stability in self-organized InAs quantum dots. Appl. Phys. Lett. 68, 205–207 (1996)

    Article  ADS  Google Scholar 

  • Mazur, YuI, Wang, ZhM, Tarasov, G.G., Xiao, M., Salamo, G.J., Tomm, J.W., Talalaev, V., Kissel, H.: Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures. Appl. Phys. Lett. 86, 63102–63104 (2005)

    Article  Google Scholar 

  • Nee, T.E., Wu, Y.F., Lin, R.M.: Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures. J. Vac. Sci. Technol. B. 23, 954–958 (2005)

    Article  Google Scholar 

  • Nee, T.E., Wu, Y.F., Cheng, C.C., Shen, H.T.: Carrier dynamics study of the temperature- and excitation-dependent photoluminescence of InAs/GaAsInAs/GaAs quantum dots. J. Appl. Phys. 99, 13506–13512 (2006)

    Article  ADS  Google Scholar 

  • Park, Y.M., Park, Y.J., Kim, K.M., Shin, J.C., Song, J.D., Lee, J.I., Yoo, K.H.: Carrier dynamics in an InGaAs dots-in-a-well structure formed by atomic-layer epitaxy. Phys. Rev. B 70, 35322–35327 (2004)

    Article  ADS  Google Scholar 

  • Polimeni, A., Patane, A., Henini, M., Eaves, L., Main, P.C.: Temperature dependence of the optical properties of InAs/AlyGa1−yAs self-organized quantum dots. Phys. Rev. B 59, 5064–5068 (1999)

    Article  ADS  Google Scholar 

  • Pulizzi, F., Kent, A.J., Patane, A., Eaves, L., Henini, M.: Time-resolved photoluminescence of InAs quantum dots in a GaAs quantum well. Appl. Phys. Lett. 84, 3046–3048 (2004)

    Article  ADS  Google Scholar 

  • Sanguinetti, S., Henini, M., Grassi Alessi, M., Capizzi, M., Frigeri, P., Franchi, S.: Carrier thermal escape and retrapping in self-assembled quantum dots. Phys. Rev. B 60, 8276–8283 (1999)

    Article  ADS  Google Scholar 

  • Sanguinetti, S., Mano, T., Oshima, M., Tateno, T., Wakaki, M., Koguchi, N.: Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer. Appl. Phys. Lett. 81, 3067–3069 (2002)

    Article  ADS  Google Scholar 

  • Sugawara, M., Mukai, K., Nakata, Y.: Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: effect of homogeneous broadening of the optical gain on lasing characteristics. Appl. Phys. Lett. 74, 1561–1563 (1999)

    Article  ADS  Google Scholar 

  • Tackeuchi, A., Nakata, Y., Muto, S., Sugiyama, Y., Usuki, T., Nishikawa, Y., Wada, O.: Time-resolved study of carrier transfer among InAs/GaAs multi-coupled quantum dots. Jpn. J. Appl. Phys. 34, L1439–L1441 (1995)

    Article  ADS  Google Scholar 

  • Tarasov, G.G., Mazur, YuI, Zhuchenko, Z.Ya., Maaßdorf, A., Nickel, D., Tomm, J.W., Kissel, H., Walther, C., Masselink, W.T.: Carrier transfer in self-assembled coupled InAs/GaAs quantum dots. J. Appl. Phys 88, 7162–7170 (2000)

    Article  ADS  Google Scholar 

  • Varshni, Y.P.: Temperature dependence of the energy gap in semiconductors. Physica 34, 149–154 (1967)

    Article  ADS  Google Scholar 

  • Xie, Q., Madhukar, A., Chen, P., Kobayashi, N.P.: Vertically self-organized InAs quantum box islands on GaAs (100). Phys. Rev. Lett. 75, 2542–2545 (1995)

    Article  ADS  Google Scholar 

  • Xu, Z.Y., Lu, Z.D., Yang, X.P., Yuan, Z.L., Zhang, B.Z., Xu, J.Z.: Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates. Phys. Rev. B 54, 11528–11531 (1996)

    Article  ADS  Google Scholar 

  • Zakharov, N.D., Werner, P., Gösele, U., Ledentsov, N.N., Bimberg, D., Cherkashin, N.A., Bert, N.A., Volovik, B.V., Ustinov, V.M., Maleev, N.A., Zhukov, A. E., Tsatsul’nikov, A.F.: Reduction of defect density in structures with InAs-GaAs quantum dots grown at low temperature for 1.55 µm Range. In: Mat. Res. Soc. Symp. Proc. vol. 672, pp. O8.5.1–O8.5.6 (2001)

  • Zhang, Y.C., Huang, C.J., Liu, F.Q., Xu, B., Wu, J., Chen, Y.H., Ding, D., Jiang, W.H., Ye, X.L., Wang, Z.G.: Thermal redistribution of photocarriers between bimodal quantum dots. J. Appl. Phys. 90(4), 1973–1976 (2001)

    Article  ADS  Google Scholar 

  • Zhang, Y.C., Pancholi, A., Stoleru, V.G.: Size-dependent radiative lifetime in vertically stacked (In, Ga)As quantum dot structures. Appl. Phys. Lett. 90, 183104–183106 (2007)

    Article  ADS  Google Scholar 

  • Zhou, W.D., Qasaimeh, O., Phillips, J., Krishna, S., Bhattacharya, P.: Bias controlled wavelength switching in coupled cavity In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs self-organized quantum dot lasers. Appl. Phys. Lett. 74, 783–785 (1999)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019, Monastir, Tunisia

    Z. Zaaboub, F. Hassen, M. Naffouti, R. M’ghaieth & H. Maaref

  2. Department of Physics, College of Science, King Khalid University of ABHA, Al-Guraigar Abha, Abha, Kingdom of Saudi Arabia

    F. Hassen

  3. LPCNO, INSA de Toulouse, Université-Paul Sabatier de Toulouse-III, 135 Avenue de Rangueil, 31077, Toulouse, France

    X. Marie

Authors
  1. Z. Zaaboub
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. F. Hassen
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. Naffouti
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. X. Marie
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. R. M’ghaieth
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. H. Maaref
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Z. Zaaboub.

Additional information

This article is part of the Topical Collection on Photonic Science and Engineering on the Micro/Nano Scale.

Guest edited by Yen-Hsun Su, Lei Liu, Yiting Yu and Yikun Liu.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Zaaboub, Z., Hassen, F., Naffouti, M. et al. Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots. Opt Quant Electron 49, 142 (2017). https://doi.org/10.1007/s11082-017-0975-x

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s11082-017-0975-x

Keywords

Search

Navigation