Hans-Joachim Queisser on his 60th birthday Jürgen H. WernerJörg WeberWolfgang Rühle Announcement Pages: A7 - A7
Properties of silicon-electrolyte junctions and their application to silicon characterization H. Föll OriginalPaper Pages: 8 - 19
Infrared absorption of interstitial oxygen in silicon at low temperatures P. Wagner OriginalPaper Pages: 20 - 25
Si DX centers in GaAs at large hydrostatic pressures E. E. HallerJ. A. Wolk OriginalPaper Pages: 26 - 31
Measurement of the interfacial energy between amorphous Si and crystalline Si K. N. Tu OriginalPaper Pages: 32 - 34
Two-dimensional electronic transport in In0.53Ga0.47As quantum Wells D. Chattopadhyay OriginalPaper Pages: 35 - 42
High-resolution absorption measurements in gold doped Si/Ge alloys E-L. HellqvistV. NageshM. Kleverman OriginalPaper Pages: 43 - 46
A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide M. StutzmannJ.-B. ChevrierA. Breitschwerdt OriginalPaper Pages: 47 - 53
A metastable electron trap in plastically deformed silicon M. StefaniakH. Alexander OriginalPaper Pages: 62 - 64
Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals D. GrünebaumTh. CzekallaK. Sumino OriginalPaper Pages: 65 - 74
Time-resolved spectroscopy of soantaneous luminescence of CdSSe1−x quantum dots A. BugayevH. KaltM. Rinker OriginalPaper Pages: 75 - 80
Photoconductivity and light-induced absorption in KNbO3:Fe L. HoltmannK. BuseE. Krätzig Contributed Papers Pages: 81 - 86
Relationship between T c and electronegativity differences in compound superconductors C. J. JouJ. Washburn Contributed Papers Pages: 87 - 93