Abstract
Relaxation semiconductors are materials dominated by free carrier transport and defined by the condition that the dielectric relaxation time τD is longer than the free carrier lifetime τ0. Novel transport behavior has been demonstrated, both theoretically and experimentally, to be associated with this regime of semiconductor behavior. This review surveys the history of the field, emphasizes recent experimental and modeling work and summarizes our current understanding of relaxation behavior in crystalline semiconductors.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
W. Van Roosbroeck: Phys. Rev. 123, 474 (1961)
M.A. Lampert, P. Mark: Current Injection in Solids (Academic, New York 1970)
W. van Roosbroeck, H.C. Casey: Phys. Rev. B 5, 2154 (1972)
H.K. Henisch, J.C. Manifacier, Y. Moreau: Phil. Mag. B 52, 279 (1985) and references therein
F. Stockmann: Proc. Conf. Photoconductivity, ed. by R.G. Breckenridge (Wiley, New York 1956) p. 269
W. van Roosbroeck, H.C. Casey, Jr.: In Proc. Tenth Intl. Conf. on the Physics of Semiconductors, ed. by S.P. Keller, J.C. Hensel, F. Stern (U.S. AEC, Springfield, VA 1970) p. 832
H.J. Queisser, H.C. Casey, W. van Roosbroeck: Phys. Rev. Lett. 26, 551 (1971)
H.J. Queisser: In Solid State Devices, ed. by P.N. Robson (Institute of Physics, Bristol 1973) p. 145
H. Kiess, A. Rose: Phys. Rev. Lett. 31, 153 (1973)
G.H. Döhler, H. Heyszenau: Phys. Rev. Lett. 30, 1200 (1973)
G.H. Döhler, H. Heyszenau: Phys. Rev. B 12, 641 (1975)
M. Illegems, H.J. Queisser: Phys. Rev. B 12, 1443 (1975)
C. Popescu, H.K. Henisch: Phys. Rev. B 11, 1563 (1975)
J.-C. Manifacier, H.K. Henisch: Phys. Rev. B 17, 2648 (1978)
Y. Moreau, J.-C. Manifacier, H.K. Henisch: J. Appl. Phys. 60, 1904 (1986)
J.-C. Manifacier, H.K. Henisch: J. Appl. Phys. 52, 5195 (1981)
J.-C. Manifacier, Y. Moreau, R. Ardebili: Carrier injection into low lifetime (relaxation) semiconductors, in Disorder and Order in the Solid State, ed. by Pryor, Schwartz, Ovshinsky (Plenum, New York 1988)
J.-C. Manifacier, R. Ardebili: Computer simulation of ambipolar transport in low lifetime semiconductor structures. InterAmerican Engineering Conference, Miami 1990 (to be published)
B.T. Cavicchi, N.M. Haegel: Phys. Rev. Lett. 63, 195 (1989)
H.K. Gummel: IEEE Trans. Electron. Dev. ED 11, 45J (1964)
J.-C. Manifacier, H.K. Henisch: J. Phys. Chem. Solids 41, 1285 (1980)
J.-C. Manifacier, Y. Moreau, H.K. Henisch: Solid State Electron. 30, 354 (1987)
Hideyo Okushi: Jpn. J. Appl. Phys. 18, 791 (1979)
N. Derhacobian, N.M. Haegel: To be published
M. Kaminska, J.M. Parsey, J. Lagowski, H.C. Gatos: Appl. Phys. Lett. 41, 989 (1982)
J.S. Blakemore: J. Phys. Chem. Solids 49, 627 (1988)
K. Leo, W.W. Rühle, N.M. Haegel: J. Appl. Phys. 62, 3055 (1987)
M. Müllenborn, H. Ch. Alt, A. Heberle: J. Appl. Phys. 69, No. 8 (1991)
Author information
Authors and Affiliations
Additional information
Dedicated to H.-J. Queisser on the occasion of his 60th birthday