A systematic analysis of defects in ion-implanted silicon K. S. JonesS. PrussinE. R. Weber OriginalPaper Pages: 1 - 34
On the generation and annealing of dangling bond defects in hydrogenated amorphous silicon G. Müller OriginalPaper Pages: 41 - 51
The determination of shadowing critical angles in impact collision ion scattering spectroscopy Th. FausterD. HartwigH. Dürr OriginalPaper Pages: 63 - 67
Optical absorptivity of ion-beam irradiated silicon K. L. BhatiaW. KrätschmerS. Kalbitzer OriginalPaper Pages: 69 - 72
Blocking of silicon oxidation by low-dose nitrogen implantation K. SchottK. C. HofmannM. Schulz OriginalPaper Pages: 73 - 76
Electrical activation of low-fluence boron implantation in silicon studied by PCV in combination with SIMS J. Kempf OriginalPaper Pages: 77 - 81
ESCA-Studies of the structure and composition of the passive film formed on stainless steels by various immersion temperatures in 0.1 M NaCl solution S. JinA. Atrens OriginalPaper Pages: 83 - 91