Novel gain materials and devices based on III-V-N/Bi compounds

In this topical collection (16 articles)

1. Nano Review

   Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures

   Ömer Dönmez, Fahrettin Sarcan, Ayse Erol, Mustafa Gunes… Article:141

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2. Nano Express

   Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

   Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato… Article:123

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3. Nano Express

   Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys

   Fahrettin Sarcan, Ömer Dönmez, Kamuran Kara, Ayse Erol… Article:119

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4. Nano Express

   Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga_1−xIn _x N _y As_1−y/GaAs quantum well p-i-n photodiodes

   Ben Royall, Hagir Khalil, Simone Mazzucato, Ayse Erol… Article:84

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5. Nano Express

   Frequency-converted dilute nitride laser diodes for mobile display applications

   Janne Konttinen, Ville-Markus Korpijärvi Article:82

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6. Nano Express

   Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells

   Michal Baranowski, Robert Kudrawiec, Marcin Syperek… Article:81

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7. Nano Express

   Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells

   Alexander Gubanov, Ville Polojärvi, Arto Aho, Antti Tukiainen… Article:80

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8. Nano Express

   Performance assessment of multijunction solar cells incorporating GaInNAsSb

   Arto Aho, Antti Tukiainen, Ville Polojärvi, Mircea Guina Article:61

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9. Nano Express

   Optical absorption of dilute nitride alloys using self-consistent Green’s function method

   Masoud Seifikar, Eoin P O’Reilly, Stephen Fahy Article:51

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10. Nano Express

    Ga_0.35In_0.65 N_0.02As_0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm

    Faten Adel Ismael Chaqmaqchee, Naci Balkan Article:37

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11. Nano Express

    Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

    Antonio D Utrilla, Jose M Ulloa, Alvaro Guzman, Adrian Hierro Article:36

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12. Nano Express

    Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

    Yi Gu, Kai Wang, Haifei Zhou, Yaoyao Li, Chunfang Cao… Article:24

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13. Nano Express

    Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

    Daniel F Reyes, Faebian Bastiman, Chris J Hunter… Article:23

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14. Nano Express

    Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

    Sefer Bora Lisesivdin, Nadir Ali Khan, Simone Mazzucato… Article:22

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15. Nano Express

    Carrier trapping and escape times in p-i-n GaInNAs MQW structures

    Hagir M Khalil, Naci Balkan Article:21

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16. Nano Review

    Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi

    Simone Mazzucato, Henri Lehec, Helene Carrère… Article:19

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