1. Effect of oxygen injection during vpe growth of GaAs Films

   • L. Palm
   • H. Bruch
   • P. Balk

   OriginalPaper Pages: 555 - 570

2. Co gas detection by ThO₂-Doped SnO₂

   • M. Nitta
   • M. Haradome

   OriginalPaper Pages: 571 - 580

3. Solution growth of Indium-Doped silicon

   • Walter Scott
   • R. J. Hager

   OriginalPaper Pages: 581 - 602

4. Control of Hole Concentration in Liquid-Phase Epitaxial Layers of PbTe by As Doping

   • M. G. Astles
   • C. Pickering
   • M. L. Young

   OriginalPaper Pages: 603 - 617

5. Preparation of photoluminescent and conductive ZnSe:I Crystals by iodine vapor transport

   • R. Poindessault

   OriginalPaper Pages: 619 - 633

6. Photoluminescence in polycrystalline GaAs AT 5K

   • P. B. Perry
   • A. E. Blakeslee

   OriginalPaper Pages: 635 - 640

7. The formation of silicides in Mo-W Bilayer films on si substrates: A marker experiment

   • J. Baglin
   • J. Dempsey
   • C. Serrano

   OriginalPaper Pages: 641 - 661

8. Preparation and properties of bulk Ga_x In_1-x As Crystals

   • Y. T. Leu
   • F. A. Thiel
   • K. J. Bachmann

   OriginalPaper Pages: 663 - 674

9. Properties of Rapidly-Grown rtr silicon sheet and their effects on solar cell processing

   • R. Legge
   • A. Baghdadi
   • B. Sopori

   OriginalPaper Pages: 675 - 688

10. Electrical properties of substitutionally doped cvd amorphous silicon

    • M. Taniguchi
    • Y. Osaka
    • M. Hirose

    OriginalPaper Pages: 689 - 700

11. Abstracts of the 1979 Electronic materials conference

    Abstract Pages: 701 - 732