Abstract
This work is the first part of an investigation on the possibility of using ZnSe single crystals, prepared by chemical transport,as semiconducting materials for optoelectronic devices. Good quality,relatively large cubic single crystals have been self-nucleated and grown in a sealed quartz tube by a somewhat modified Kaldis process which is described.X-ray and electron diffraction as well as observations by a polarizing microscope and EPR have been used to determine the crystalline perfection. These single crystals were also characterized by residual impurities. Some effects of Zn annealing on the electrical and photoluminescent properties are reported too. Key words : ZnSe:I, iodine transport, photoluminescence, resistivity, annealing.
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Work supported by the : Centre National d’Etudes des Telecommunications (CNET) 92220 BAGNEUX Franae. Agenay under contract N‡ 78 9 B 372/BCJ/PEC.
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Poindessault, R. Preparation of photoluminescent and conductive ZnSe:I Crystals by iodine vapor transport. J. Electron. Mater. 8, 619–633 (1979). https://doi.org/10.1007/BF02657082
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DOI: https://doi.org/10.1007/BF02657082