1. Foreword

   • Joshua Caldwell
   • Jamie Phillips
   • Grace Xing

   EditorialNotes 04 February 2011 Pages: 361 - 361

2. An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters

   • Valerio Di Lecce
   • Michele Esposto
   • Alessandro Chini

   OriginalPaper 10 December 2010 Pages: 362 - 368

3. Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures

   • A. Armstrong
   • M. H. Crawford
   • D. D. Koleske

   OriginalPaper Open access 24 December 2010 Pages: 369 - 376

4. Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode

   • Joseph Dion
   • Qhalid Fareed
   • Asif Khan

   OriginalPaper 06 January 2011 Pages: 377 - 381

5. Novel Cs-Free GaN Photocathodes

   • Neeraj Tripathi
   • L. D. Bell
   • Fatemeh Shahedipour Sandvik

   OriginalPaper 29 January 2011 Pages: 382 - 387

6. Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

   • L. E. Rodak
   • D. Korakakis

   OriginalPaper 15 December 2010 Pages: 388 - 393

7. Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates

   • Patrik Ščajev
   • Jawad Hassan
   • J. Peder Bergman

   OriginalPaper 28 September 2010 Pages: 394 - 399

8. Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications

   • Ariel Virshup
   • Fang Liu
   • Lisa M. Porter

   OriginalPaper 23 December 2010 Pages: 400 - 405

9. Improved Stability of Pd/Ti Contacts to p-Type SiC Under Continuous DC and Pulsed DC Current Stress

   • B. P. Downey
   • S. E. Mohney
   • J. R. Flemish

   OriginalPaper 17 December 2010 Pages: 406 - 412

10. Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers

    • Nadeemullah A. Mahadik
    • Robert E. Stahlbush
    • D. Kurt Gaskill

    OriginalPaper 12 February 2011 Pages: 413 - 418

11. Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

    • Robin C. Scott
    • Kevin D. Leedy
    • Yong-Hang Zhang

    OriginalPaper 28 October 2010 Pages: 419 - 428

12. Li and OH-Li Complexes in Hydrothermally Grown Single-Crystalline ZnO

    • K. M. Johansen
    • H. Haug
    • B. G. Svensson

    OriginalPaper Open access 11 November 2010 Pages: 429 - 432

13. Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors

    • Frank Catalfamo
    • Tingfang Yen
    • Wayne A. Anderson

    OriginalPaper 18 November 2010 Pages: 433 - 439

14. Properties of Nitrogen Molecules in ZnO

    • N. H. Nickel
    • M. A. Gluba

    OriginalPaper 23 December 2010 Pages: 440 - 445

15. Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition

    • J. N. Dai
    • X. Y. Han
    • C. Q. Chen

    OriginalPaper 01 February 2011 Pages: 446 - 452

16. In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring

    • J.-P. Biethan
    • L. Considine
    • D. Pavlidis

    OriginalPaper 29 January 2011 Pages: 453 - 458

17. Investigation into Texture, Preferential Orientation, and Optical Properties of Zinc Oxide Nanopolycrystalline Thin Films Deposited by the Sol–Gel Technique on Different Substrates

    • Daoli Zhang
    • Yiping Huang
    • Xiangshui Miao

    OriginalPaper 29 January 2011 Pages: 459 - 465

18. Steady-State Electron Transport and Low-Field Mobility of Wurtzite Bulk ZnO and Zn_1−x Mg _x O

    • Z. Yarar

    OriginalPaper 29 January 2011 Pages: 466 - 472

19. Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO

    • A. Lajn
    • M. Schmidt
    • M. Grundmann

    OriginalPaper 28 October 2010 Pages: 473 - 476

20. Erratum to: Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO

    • A. Lajn
    • M. Schmidt
    • M. Grundmann

    Erratum 05 February 2011 Pages: 477 - 477