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Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

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Abstract

Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H2 in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.

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Authors and Affiliations

  1. School of Mechanical, Aerospace, Chemical and Materials Engineering, Arizona State University, Tempe, AZ, 85287, USA

    Robin C. Scott

  2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287, USA

    Ding Ding, Xianfeng Lu & Yong-Hang Zhang

  3. Department of Physics, Arizona State University, Tempe, AZ, 85287, USA

    David J. Smith

  4. Air Force Research Laboratory, Wright-Patterson AFB, OH, 45433, USA

    Kevin D. Leedy & Burhan Bayraktaroglu

  5. Semiconductor Research Center, Wright State University, Dayton, OH, 45435, USA

    David C. Look

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  1. Robin C. Scott
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  4. David C. Look
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Correspondence to Robin C. Scott.

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Scott, R.C., Leedy, K.D., Bayraktaroglu, B. et al. Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition. J. Electron. Mater. 40, 419–428 (2011). https://doi.org/10.1007/s11664-010-1396-9

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  • DOI: https://doi.org/10.1007/s11664-010-1396-9

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