1. Some properties of chemically vapor deposited films of Al_xO_yN_z on silicon

   • E. A. Irene
   • V. J. Silvestri
   • G. R. Woolhouse

   OriginalPaper Pages: 409 - 427

2. Chemical vapor deposition of Al_xO_yN_z films

   • V. J. Silvestri
   • E. A. Irene
   • J. D. Kuptsis

   OriginalPaper Pages: 429 - 444

3. The gold-silicon phase diagram

   • R. P. Anantatmula
   • A. A. Johnson
   • R. J. Horylev

   OriginalPaper Pages: 445 - 463

4. Vacuum deposited epitaxial layers of PbS_l−xSe_x for laser devices

   • G. F. McLane
   • K. J. Sleger

   OriginalPaper Pages: 465 - 479

5. Infrared optical properties of GaAs after N⁺ ion implantation

   • F. Euler
   • J. J. Comer
   • C. A. Bergeron

   OriginalPaper Pages: 481 - 495

6. Effects of Mg additions on the electromigration behavior of Al thin film conductors

   • F. M. d’Heurle
   • A. Gangulee
   • V. A. Ranieri

   OriginalPaper Pages: 497 - 515

7. Preparation and physical properties of lanthanum-modified Sr_l-xBa_xNb₂O₆, ferroelectric crystals

   • R. B. Maciolek
   • S. T. Liu

   OriginalPaper Pages: 517 - 526

8. Temperature dependence of carrier ionization rates and saturated velocities in silicon

   • D. R. Decker
   • C. N. Dunn

   OriginalPaper Pages: 527 - 547

9. Formation of lithium niobate-tantalate waveguides

   • W. Phillips
   • J. M. Hammer

   OriginalPaper Pages: 549 - 565

10. Analysis of room-temperature luminescence spectra of VPE-grown nitrogen-doped gallium phosphide

    • P. F. Lindquist
    • T. L. Larsen

    OriginalPaper Pages: 567 - 590

11. Charge transfer properties of mnos structures as influenced by processing parameters

    • S. Zirinsky

    OriginalPaper Pages: 591 - 624

12. Growth of CdTe_l−x Se_x by the LEC and bridgman techniques

    • N. Klausutis
    • J. A. Adamski
    • J. R. Weiner

    OriginalPaper Pages: 625 - 634