Abstract
The effect of nitrogen doping on the 300°K quantum efficiency and luminescence spectra of VPE-grown gallium phosphide has been investigated. The range of nitrogen concentrations studied was 2 × 1018 –1.5 × 1019 cm{−3 on the corrected Lightowlers scale. Over this range, the external quantum efficiency of contactless dice at 40 amp/cm2 in air varied from 0.04% to 0.13%, increasing monotonically with increasing nitrogen concentration. The photoluminescence spectra from as-grown epi layers and the electroluminescence spectra of contacted dice in reflecting cups were compared, and were characterized by the parameters lumens/watt, radiometric center of gravity, and photometric center of gravity. The relationship of these parameters to each other and their variation with nitrogen concentration in GaP has been determined. The problem of filtering the spectra to obtain greener devices with acceptable brightness has been investi-gated using the transmission spectra of two specific filters.
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Lindquist, P.F., Larsen, T.L. Analysis of room-temperature luminescence spectra of VPE-grown nitrogen-doped gallium phosphide. J. Electron. Mater. 4, 567–590 (1975). https://doi.org/10.1007/BF02666236
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DOI: https://doi.org/10.1007/BF02666236