1. Foreword

   • Robert Stahlbush
   • Jamie Phillips
   • Grace Xing

   EditorialNotes 28 January 2009 Pages: 483 - 483

2. Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires

   • A. Armstrong
   • G.T. Wang
   • A.A. Talin

   OriginalPaper 07 October 2008 Pages: 484 - 489

3. Growth and Characterization of GaN Nanowires for Hydrogen Sensors

   • Jason L. Johnson
   • Yongho Choi
   • S.J. Pearton

   OriginalPaper 19 November 2008 Pages: 490 - 494

4. GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements

   • L. M. Mansfield
   • K. A. Bertness
   • N. A. Sanford

   OriginalPaper 30 January 2009 Pages: 495 - 504

5. Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)

   • Tae-Hong Kim
   • Chan-Oh Jang
   • Sang-Kwon Lee

   OriginalPaper 29 January 2009 Pages: 505 - 510

6. Effects of TiN Buffer Layer Thickness on GaN Growth

   • Kazuhiro Ito
   • Yu Uchida
   • Masanori Murakami

   OriginalPaper 26 November 2008 Pages: 511 - 517

7. Microstructural Investigation of Bilayer Growth of In- and Ga-Rich InGaN Grown by Chemical Vapor Deposition

   • Jiwon Park
   • Sung-Il Baik
   • Young-Woon Kim

   OriginalPaper 12 December 2008 Pages: 518 - 522

8. GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces

   • K. Tang
   • W. Huang
   • T. Paul Chow

   OriginalPaper 06 January 2009 Pages: 523 - 528

9. Analysis of Oxidized p-GaN Films Directly Grown Using Bias-Assisted Photoelectrochemical Method

   • Li-Hsien Huang
   • Kai-Chuan Kan
   • Ching-Ting Lee

   OriginalPaper 30 December 2008 Pages: 529 - 532

10. Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

    • M.A. Miller
    • M.H. Crawford
    • K.H.A. Bogart

    OriginalPaper 24 January 2009 Pages: 533 - 537

11. Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides by NF₃ Annealing

    • Kenji Orita
    • Masao Kawaguchi
    • Daisuke Ueda

    OriginalPaper 30 January 2009 Pages: 538 - 544

12. Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN

    • I. Chary
    • A. Chandolu
    • M. Holtz

    OriginalPaper 28 January 2009 Pages: 545 - 550

13. Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing

    • S.I. Maximenko
    • J.A. Freitas Jr.
    • M.A. Fanton

    OriginalPaper 23 December 2008 Pages: 551 - 556

14. X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration

    • A. Chandolu
    • D. Y. Song
    • M. W. Holtz

    OriginalPaper 09 January 2009 Pages: 557 - 562

15. Current-Induced Degradation of Nickel Ohmic Contacts to SiC

    • B.P. Downey
    • J.R. Flemish
    • S.E. Mohney

    OriginalPaper 24 January 2009 Pages: 563 - 568

16. Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors

    • Ariel Virshup
    • Lisa M Porter
    • Anita Lloyd Spetz

    OriginalPaper 09 January 2009 Pages: 569 - 573

17. Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

    • M. L. Bolen
    • M. A. Capano

    OriginalPaper 21 January 2009 Pages: 574 - 580

18. Heteroepitaxial 3C-SiC on Si with Various Carbonization Process Conditions

    • Byeung C. Kim
    • John Coy
    • Michael A. Capano

    OriginalPaper 10 January 2009 Pages: 581 - 585

19. Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis

    • L. Goris
    • R. Noriega
    • A. Salleo

    OriginalPaper Open access 30 December 2008 Pages: 586 - 595

20. Pre-avalanche Ultraviolet Photoconduction Properties of Transitional-Metal-Doped ZnO Nanowires

    • N. Kouklin
    • M. Omari
    • S. Sen

    OriginalPaper 09 January 2009 Pages: 596 - 600

21. Surface Wettability of Nanostructured Zinc Oxide Films

    • Jie Han
    • Wei Gao

    OriginalPaper 30 December 2008 Pages: 601 - 608

22. A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film

    • Zhen Bi
    • Xiaodong Yang
    • Xun Hou

    OriginalPaper 09 December 2008 Pages: 609 - 612

23. Growth-Temperature-Controlled Optical Properties of Textured Mg _x Zn_1−x O Thin Films

    • W. Wei
    • C. Jin
    • R.J. Narayan

    BriefCommunication 30 December 2008 Pages: 613 - 617

24. Comment on A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater. 37, 646 (2008)]

    • V. Tilak
    • K. Matocha

    OriginalPaper 21 February 2009 Pages: 618 - 620

25. Response to the Comments by Tilak and Matocha on the Article by A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater., vol. 37, no. 5, pp. 646–654 (2008)]

    • A. Agarwal
    • S. Haney

    ReviewPaper 30 January 2009 Pages: 621 - 622