Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires A. ArmstrongG.T. WangA.A. Talin OriginalPaper 07 October 2008 Pages: 484 - 489
Growth and Characterization of GaN Nanowires for Hydrogen Sensors Jason L. JohnsonYongho ChoiS.J. Pearton OriginalPaper 19 November 2008 Pages: 490 - 494
GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements L. M. MansfieldK. A. BertnessN. A. Sanford OriginalPaper 30 January 2009 Pages: 495 - 504
Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si) Tae-Hong KimChan-Oh JangSang-Kwon Lee OriginalPaper 29 January 2009 Pages: 505 - 510
Effects of TiN Buffer Layer Thickness on GaN Growth Kazuhiro ItoYu UchidaMasanori Murakami OriginalPaper 26 November 2008 Pages: 511 - 517
Microstructural Investigation of Bilayer Growth of In- and Ga-Rich InGaN Grown by Chemical Vapor Deposition Jiwon ParkSung-Il BaikYoung-Woon Kim OriginalPaper 12 December 2008 Pages: 518 - 522
GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces K. TangW. HuangT. Paul Chow OriginalPaper 06 January 2009 Pages: 523 - 528
Analysis of Oxidized p-GaN Films Directly Grown Using Bias-Assisted Photoelectrochemical Method Li-Hsien HuangKai-Chuan KanChing-Ting Lee OriginalPaper 30 December 2008 Pages: 529 - 532
Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes M.A. MillerM.H. CrawfordK.H.A. Bogart OriginalPaper 24 January 2009 Pages: 533 - 537
Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides by NF3 Annealing Kenji OritaMasao KawaguchiDaisuke Ueda OriginalPaper 30 January 2009 Pages: 538 - 544
Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN I. CharyA. ChandoluM. Holtz OriginalPaper 28 January 2009 Pages: 545 - 550
Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing S.I. MaximenkoJ.A. Freitas Jr.M.A. Fanton OriginalPaper 23 December 2008 Pages: 551 - 556
X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration A. ChandoluD. Y. SongM. W. Holtz OriginalPaper 09 January 2009 Pages: 557 - 562
Current-Induced Degradation of Nickel Ohmic Contacts to SiC B.P. DowneyJ.R. FlemishS.E. Mohney OriginalPaper 24 January 2009 Pages: 563 - 568
Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors Ariel VirshupLisa M PorterAnita Lloyd Spetz OriginalPaper 09 January 2009 Pages: 569 - 573
Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes M. L. BolenM. A. Capano OriginalPaper 21 January 2009 Pages: 574 - 580
Heteroepitaxial 3C-SiC on Si with Various Carbonization Process Conditions Byeung C. KimJohn CoyMichael A. Capano OriginalPaper 10 January 2009 Pages: 581 - 585
Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis L. GorisR. NoriegaA. Salleo OriginalPaper Open access 30 December 2008 Pages: 586 - 595
Pre-avalanche Ultraviolet Photoconduction Properties of Transitional-Metal-Doped ZnO Nanowires N. KouklinM. OmariS. Sen OriginalPaper 09 January 2009 Pages: 596 - 600
Surface Wettability of Nanostructured Zinc Oxide Films Jie HanWei Gao OriginalPaper 30 December 2008 Pages: 601 - 608
A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film Zhen BiXiaodong YangXun Hou OriginalPaper 09 December 2008 Pages: 609 - 612
Growth-Temperature-Controlled Optical Properties of Textured Mg x Zn1−x O Thin Films W. WeiC. JinR.J. Narayan BriefCommunication 30 December 2008 Pages: 613 - 617
Comment on A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater. 37, 646 (2008)] V. TilakK. Matocha OriginalPaper 21 February 2009 Pages: 618 - 620
Response to the Comments by Tilak and Matocha on the Article by A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater., vol. 37, no. 5, pp. 646–654 (2008)] A. AgarwalS. Haney ReviewPaper 30 January 2009 Pages: 621 - 622