Diffusion of Selenium in Liquid-Phase Epitaxy–Grown Hg0.78Cd0.22Te W. ZhaoT.D. GoldingR.M. Lindstrom OriginalPaper 04 April 2007 Pages: 822 - 825
Magneto-Transport Characterization of p-Type HgCdTe G.K.O. TsenC.A. MuscaL. Faraone OriginalPaper 19 May 2007 Pages: 826 - 831
Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy D. JohnstoneT.D. GoldingM. Carmody OriginalPaper 31 July 2007 Pages: 832 - 836
Excimer Laser Etching Process of CdTe Crystals for Formation of Deep Vertical Trenches K. YasudaM. NiraulaO. Eryu Special Issue Paper 24 April 2007 Pages: 837 - 840
Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe P.Y. EmelieE. CaginS. Sivananthan Special Issue Paper 24 April 2007 Pages: 841 - 845
Modeling and Design Considerations of HgCdTe Infrared Photodiodes under Nonequilibrium Operation P.Y. EmelieJ.D. PhillipsC.H. Grein Special Issue Paper 24 April 2007 Pages: 846 - 851
Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R 0 A Comparable to HgCdTe C.L. CanedyE.H. AiferE.M. Jackson OriginalPaper 09 June 2007 Pages: 852 - 856
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study Francesco BertazziMichele GoanoEnrico Bellotti OriginalPaper 09 June 2007 Pages: 857 - 863
Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique Janet E. HailsAndrew M. KeirJean Giess Special Issue Paper 25 April 2007 Pages: 864 - 870
Screening Effects in High Resistivity CdTe for X-ray and Gamma Ray Detectors J. KubátJ. FrancE. Belas OriginalPaper 09 May 2007 Pages: 871 - 876
Optical and Structural Properties of CdTe Grown by Molecular Beam Epitaxy at Low Temperature for Resonant-Cavity-Enhanced HgCdTe Detectors J.G.A. WehnerR.H. SewellL. Faraone OriginalPaper 18 May 2007 Pages: 877 - 883
Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes R.J. WesterhoutC.A. MuscaL. Faraone OriginalPaper 09 May 2007 Pages: 884 - 889
Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study He DuanXiaoshuang ChenWei Lu Special Issue Paper 01 May 2007 Pages: 890 - 894
Fast and Reversible Wettability Transitions on ZnO Nanostructures Z. ZhangH. ChenY. Lu OriginalPaper 10 May 2007 Pages: 895 - 899
Development of Molecular Beam Epitaxially Grown Hg1−x Cd x Te for High-Density Vertically-Integrated Photodiode-Based Focal Plane Arrays F. AqaridenP.D. DreiskeT.H. Teherani OriginalPaper 07 June 2007 Pages: 900 - 904
Nucleation of ZnTe on the As-Terminated Si(112) Surface M. Jaime-VasquezM. MartinkaJ.D. Benson OriginalPaper 06 July 2007 Pages: 905 - 909
Accurate Determination of the Matrix Composition Profile of Hg1–x Cd x Te by Secondary Ion Mass Spectrometry Larry WangAlice WangSteve Price OriginalPaper 09 May 2007 Pages: 910 - 912
Effect of High-Density Plasma Process Parameters on Carrier Transport Properties in p-to-n Type Converted Hg0.7Cd0.3Te Layer B.A. ParkC.A. MuscaL. Faraone OriginalPaper 12 June 2007 Pages: 913 - 918
Extended X-Ray Absorption Fine Structure Study of Arsenic in HgCdTe S. PlissardG. GiustiP. Holliger OriginalPaper 09 May 2007 Pages: 919 - 924
Selective Growth of CdTe on Si(211): First-Principle Calculations Y. HuangX.S. ChenW. Lu OriginalPaper 17 May 2007 Pages: 925 - 930
Design and Assessment of Metal-Organic Vapor Phase Epitaxy—Grown Dual Waveband Infrared Detectors N.T. GordonP. AbbottJ. Price OriginalPaper 30 May 2007 Pages: 931 - 936
Assessment of Tight Pixel Geometry Influence on Surface Chemistry of Hg1−X Cd X Te Focal Plane Array by Time of Flight–Secondary Ion Mass Spectroscopy: Novel Analytical Methods G. GarwoodR. OlshoveF. Lua OriginalPaper 25 July 2007 Pages: 937 - 948
Surface Structure of Molecular Beam Epitaxy (211)B HgCdTe J.D. BensonL.A. AlmeidaU. Lee OriginalPaper 02 June 2007 Pages: 949 - 957
Improved Defect and Fourier Transform Infrared Spectroscopy Analysis for Prediction of Yield for HgCdTe Multilayer Heterostructures D.D. LofgreenM.F. VilelaS.M. Johnson OriginalPaper 03 August 2007 Pages: 958 - 962
Gain and Dark Current Characteristics of Planar HgCdTe Avalanche Photo Diodes Gwladys PerraisOlivier GravrandJohan Rothman OriginalPaper 17 June 2007 Pages: 963 - 970
Investigation of Artificial Forced Cooling in the Bridgman Crystal Growth of Cadmium Zinc Telluride Juncheng LiuJiao LiSiva Sivananthan OriginalPaper 23 June 2007 Pages: 971 - 980
From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n + n −/p Ion Implantation Technology O. GravrandE. De BorniolG. Destefanis OriginalPaper 29 June 2007 Pages: 981 - 987
MCT-on-Silicon Negative Luminescence Devices with High Efficiency J.R. LindleW.W. BewleyE. Piquette OriginalPaper 19 June 2007 Pages: 988 - 992
Comparative Study of HgCdTe Etchants: An Electrical Characterization Shubhrangshu MallickRajni KiranSivalingam Sivananthan OriginalPaper 18 July 2007 Pages: 993 - 999
Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail Yong ChangS. GuhaS. Sivananthan OriginalPaper 18 July 2007 Pages: 1000 - 1006
Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe A.J. StoltzJ.B. VaresiJ.D. Benson OriginalPaper 11 July 2007 Pages: 1007 - 1012
Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors Krishna C. MandalSung Hoon KangArnold Burger OriginalPaper 06 July 2007 Pages: 1013 - 1020
Chemical Etching of CdTe in Aqueous Solutions of H2O2-HI-Citric Acid V. G. Ivanits’kaP. MoravecP. Höschl OriginalPaper 29 June 2007 Pages: 1021 - 1024
Elimination of Inclusions in (CdZn)Te Substrates by Post-grown Annealing E. BelasM. BugárP. Höschl OriginalPaper 29 June 2007 Pages: 1025 - 1030
Status of HgCdTe Bicolor and Dual-Band Infrared Focal Arrays at LETI G. DestefanisJ. BayletA. Million OriginalPaper 20 July 2007 Pages: 1031 - 1044
Fabrication and Characterization of Small Unit-Cell Molecular Beam Epitaxy Grown HgCdTe-on-Si Mid-Wavelength Infrared Detectors E. P. G. SmithG. M. VenzorJ. W. Bangs OriginalPaper 18 July 2007 Pages: 1045 - 1051
Metal-Organic Chemical Vapor Deposition of Hg1−x Cd x Te Fully Doped Heterostructures Without Postgrowth Anneal for Uncooled MWIR and LWIR Detectors Adam PiotrowskiKrzysztof Kłos OriginalPaper 07 July 2007 Pages: 1052 - 1058
HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays M.B. ReineJ.W. MarciniecG.M. Williams OriginalPaper 20 July 2007 Pages: 1059 - 1067
Effect of Dislocations on VLWIR HgCdTe Photodiodes T. ParodosE.A. FitzgeraldP. Lovecchio OriginalPaper 06 July 2007 Pages: 1068 - 1076
Fast Detection of Precipitates and Oxides on CdZnTe Surfaces by Spectroscopic Ellipsometry G. BadanoA. MillionA. Etcheberry OriginalPaper 06 July 2007 Pages: 1077 - 1084
High-Performance LWIR MBE-Grown HgCdTe/Si Focal Plane Arrays Richard BornfreundJoe P. RosbeckMeimei Z. Tidrow OriginalPaper 12 July 2007 Pages: 1085 - 1091
Synchrotron X-ray Based Characterization of CdZnTe Crystals Martine C. DuffDouglas B. HunterMichael Groza OriginalPaper 06 July 2007 Pages: 1092 - 1097
Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon M. CarmodyD. EdwallN.K. Dhar OriginalPaper 06 July 2007 Pages: 1098 - 1105
Secondary Ion Mass Spectrometry and Time-of-Flight Secondary Ion Mass Spectrometry Study of Impurity Measurements in HgCdTe Steve PriceLarry WangIan Mowat OriginalPaper 13 August 2007 Pages: 1106 - 1109