Synthesis of ultra-high-purity CdTe ingots by the traveling heater method N. AudetM. Cossette Special Issue Paper Pages: 683 - 686
Traveling heater method preparation and composition analysis of CdTe ingots N. AudetV. N. GuskovJ. H. Greenberg Special Issue Paper Pages: 687 - 692
A new growth method for CdTe: A breakthrough toward large areas B. PelliciariF. DierreB. Schaub Special Issue Paper Pages: 693 - 698
Growth and electronic properties of ZnO epilayers by plasma-assisted molecular beam epitaxy T. E. MurphyD. Y. ChenJ. D. Phillips Special Issue Paper Pages: 699 - 703
Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors R. BommenaC. FulkS. D. Hersee Special Issue Paper Pages: 704 - 709
Mercury cadmium telluride/cadmium telluride distributed bragg reflectors for use with resonant cavity-enhanced detectors J. G. A. WehnerR. H. SewellL. Faraone Special Issue Paper Pages: 710 - 715
A monolithically integrated HgCdTe short-wavelength infrared photodetector and micro-electro-mechanical systems-based optical filter J. AntoszewskiK. J. WinchesterJ. E. Robinson Special Issue Paper Pages: 716 - 721
256×256 focal plane array midwavelength infrared camera based on InAs/GaSb short-period superlattices M. WaltherR. RehmJ. Ziegler Special Issue Paper Pages: 722 - 725
Surface structure of plasma-etched (211)B HgCdTe J. D. BensonA. J. StoltzJ. H. Dinan Special Issue Paper Pages: 726 - 732
A langmuir probe investigation of electron cyclotron resonance argon-hydrogen plasmas A. J. StoltzM. J. SperryJ. H. Dinan Special Issue Paper Pages: 733 - 739
Inductively coupled plasma etching of HgCdTe using a CH4-based mixture E. LaffosseJ. BayletC. Cardinaud Special Issue Paper Pages: 740 - 745
Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication E. P. G. SmithG. M. VenzorW. A. Radford Special Issue Paper Pages: 746 - 753
Al ohmic contacts to HCI-treated MgxZn1−xO H. ShengG. SarafY. Lu Special Issue Paper Pages: 754 - 757
Investigation of HgCdTe surface quality following Br-based etching for device fabrication using spectroscopic ellipsometry J. B. VaresiJ. D. BensonJ. H. Dinan Special Issue Paper Pages: 758 - 761
Improved model for the analysis of FTIR transmission spectra from multilayer HgCdTe structures M. DaraseliaM. CarmodyT. E. Tiwald Special Issue Paper Pages: 762 - 767
Temperature, thickness, and interfacial composition effects on the absorption properties of (Hg,Cd)Te epilayers grown by liquid-phase epitaxy on CdZnTe C. L. LittlerB. P. GormanH. F. Schaake Special Issue Paper Pages: 768 - 772
Detailed study of above bandgap optical absorption in HgCdTe K. MoazzamiJ. PhillipsT. Tiwald Special Issue Paper Pages: 773 - 778
Lateral uniformity in HgCdTe layers grown by molecular beam epitaxy Brett Z. NoshoJohn A. RothLe Pham Special Issue Paper Pages: 779 - 785
Optical and microstructural characterization of the effects of rapid thermal annealing of CdTe thin films grown on Si (100) substrates S. NeretinaN. V. SochinskiiP. Mascher Special Issue Paper Pages: 786 - 790
Spatially resolved photoluminescence and transmission spectra of HgCdTe Robert FurstenbergJeffrey O. WhiteGregory L. Olson Special Issue Paper Pages: 791 - 794
High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates R. H. SewellC. A. MuscaT. Dieing Special Issue Paper Pages: 795 - 803
High-energy X-ray diffraction and topography investigation of CdZnTe G. A. CariniG. S. CamardaR. B. James Special Issue Paper Pages: 804 - 810
Pressure dependence of intersubband transitions in HgTe/Hg0.3Cd0.7Te superlattices C. R. BeckerV. LatussekL. Ulivi Special Issue Paper Pages: 811 - 814
Development of nuclear radiation detectors based on epitaxially grown thick CdTe layers on n+-GaAs substrates M. NiraulaK. YasudaK. Suzuki Special Issue Paper Pages: 815 - 819
Monolithically integrated HgCdTe focal plane arrays S. VelicuT. S. LeeD. Lianos Special Issue Paper Pages: 820 - 831
Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance M. CarmodyJ. G. PaskoN. K. Dhar Special Issue Paper Pages: 832 - 838
Influence of arsenic on the atomic structure of the Si(112) surface Daniel H. ZavitzAlexandra EvstigneevaMichael Trenary Special Issue Paper Pages: 839 - 845
Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces C. FulkR. SporkenS. Sivananthan Special Issue Paper Pages: 846 - 850
An improved method for Hg1−xCdxTe surface chemistry characterization R. OlshoveG. GarwoodM. Liguori Special Issue Paper Pages: 851 - 858
Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation C. MiclausG. MaloufM. S. Goorsky Special Issue Paper Pages: 859 - 863
Deactivation of arsenic as an acceptor by ion implantation and reactivation by low-temperature anneal D. ChandraH. F. SchaakeH. D. Shih Special Issue Paper Pages: 864 - 867
Diffusion of gold and native defects in mercury cadmium telluride Anthony J. CianiSerdar OgutSiva Sivananthan Special Issue Paper Pages: 868 - 872
Model for minority carrier lifetimes in doped HgCdTe S. KrishnamurthyM. A. BerdingR. DeWames Special Issue Paper Pages: 873 - 879
Minority carrier lifetime in p-HgCdTe M. A. KinchF. AqaridenH. D. Shih Special Issue Paper Pages: 880 - 884
Molecular beam epitaxy growth of high-quality HgCdTe LWIR layers on polished and repolished CdZnTe substrates R. SinghS. VelicuJ. H. Dinan Special Issue Paper Pages: 885 - 890
Ten-inch molecular beam epitaxy production system for HgCdTe growth Majid ZandianD. ScottS. Parker Special Issue Paper Pages: 891 - 897
Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy M. F. VilelaA. A. BuellS. M. Johnson Special Issue Paper Pages: 898 - 904
Comparison of normal and inverted band structure HgTe/CdTe superlattices for very long wavelength infrared detectors C. H. GreinH. JungM. E. Flatté Special Issue Paper Pages: 905 - 908
Design and development of multicolor MWIR/LWIR and LWIR/VLWIR detector arrays Ashok K. SoodJames E. EgertonRobert Richwine Special Issue Paper Pages: 909 - 912
Current voltage modeling of current limiting mechanisms in HgCdTe focal plane array photodetectors Angelo Scotty GilmoreJames BangsAmanda Gerrish Special Issue Paper Pages: 913 - 921
Imaging one-dimensional and two-dimensional planar photodiode detectors fabricated by ion milling molecular beam epitaxy CdHgTe R. HaakenaasenH. SteenN. Gordon Special Issue Paper Pages: 922 - 927
Correlation between visual defects and increased dark current in large-area Hg1−xCdxTe photodiodes A. I. D’SouzaM. G. StapelbroekS. Bhargava Special Issue Paper Pages: 933 - 938
Semi-insulating CdTe with a minimized deep-level doping R. GrillJ. FrancP. Moravec Special Issue Paper Pages: 939 - 943
Optical properties of Cl-doped ZnSe epilayers grown on GaAs substrates B. C. KarrerF. C. PeirisThomas H. Myers Special Issue Paper Pages: 944 - 948
P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications E. James EgertonAshok K. SoodTodd Steiner Special Issue Paper Pages: 949 - 952
Morphological defects of molecular beam epitaxy-grown CdTe and CdSeTe on Si Eva M. CampoThomas HierlGregory Brill Special Issue Paper Pages: 953 - 956
Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing E. BelasJ. FrancP. Höschl Special Issue Paper Pages: 957 - 962