Impact of critical processes on HgCdTe diode performance and yield Heinrich FiggemeierMartin BruderJohann Ziegler Special Issue Paper Pages: 588 - 591
Recent developments of high-complexity HgCdTe focal plane arrays at leti infrared laboratory G. DestéfanisA. AstierJ. P. Zanatta Special Issue Paper Pages: 592 - 601
HgCdTe molecular beam epitaxy material for microcavity light emitters: Application to gas detection in the 2–6 µm range J. P. ZanattaF. NoëlE. Hadji Special Issue Paper Pages: 602 - 607
Far-infrared detector based on HgTe/HgCdTe superlattices Y. D. ZhouC. R. BeckerS. Sivananthan Special Issue Paper Pages: 608 - 614
HgCdTe long-wavelength infrared photovoltaic detectors fabricated using plasma-induced junction formation technology T. NguyenC. A. MuscaL. Faraone Special Issue Paper Pages: 615 - 621
Planar p-on-n HgCdTe heterojunction mid-wavelength infrared photodiodes formed using plasma-induced junction isolation C. A. MuscaJ. AntoszewskiS. Terterian Special Issue Paper Pages: 622 - 626
Small two-dimensional arrays of mid-wavelength infrared HgCdTe diodes fabricated by reactive ion etching-induced p-to-n-type conversion J. AntoszewskiC. A. MuscaL. Faraone Special Issue Paper Pages: 627 - 632
1/f noise in large-area Hg1−xCdxTe photodiodes A. I. D’SouzaM. G. StapelbroekJ. C. Ehlert Special Issue Paper Pages: 633 - 638
Minority carrier lifetime and noise in abrupt molecular-beam epitaxy-grown HgCdTe heterostructures R. SewellC. A. MuscaA. Rogalski Special Issue Paper Pages: 639 - 645
Optical absorption properties of HgCdTe epilayers with uniform composition K. MoazzamiD. LiaoD. D. Edwall Special Issue Paper Pages: 646 - 650
Midwave-infrared negative luminescence properties of HgCdTe devices on silicon substrates W. W. BewleyJ. R. LindleS. M. Johnson Special Issue Paper Pages: 651 - 655
Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates C. D. MaxeyJ. P. CamplinN. T. Gordon Special Issue Paper Pages: 656 - 660
Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defects J. B. VaresiA. A. BuellS. M. Johnson Special Issue Paper Pages: 661 - 666
Novel HgxCd1−xTe device structure for higher operating temperature detectors M. K. AshbyN. T. GordonR. Catchpole Special Issue Paper Pages: 667 - 671
Stacked multijunction photodetectors of long-wavelength radiation J. PiotrowskiP. BrzozowskiK. Jóźwikowski Special Issue Paper Pages: 672 - 676
Low-energy electron-enhanced etching of HgCdTe Jaehwa KimT. S. KogaScott M. Johnson Special Issue Paper Pages: 677 - 685
Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenches J. D. BensonA. J. StoltzJ. H. Dinan Special Issue Paper Pages: 686 - 691
The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe A. J. StoltzJ. D. BensonJ. H. Dinan Special Issue Paper Pages: 692 - 697
Time relaxation of point defects in p- and n-(HgCd)Te after ion milling E. BelasV. V. BogoboyashchyyV. A. Yudenkov Special Issue Paper Pages: 698 - 702
Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy T. AokiY. ChangDavid J. Smith Special Issue Paper Pages: 703 - 709
Threading and misfit-dislocation motion in molecular-beam epitaxy-grown HgCdTe epilayers M. CarmodyD. LeeJ. Arias Special Issue Paper Pages: 710 - 716
Nucleation of ZnTe/CdTe epitaxy on high-miller-index Si surfaces G. BrillY. ChenR. Singh Special Issue Paper Pages: 717 - 722
Molecular-beam epitaxial growth of CdSexTe1−x on Si(211) Y. P. ChenG. BrillN. K. Dhar Special Issue Paper Pages: 723 - 727
Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates M. NiraulaK. YasudaY. Agata Special Issue Paper Pages: 728 - 732
Optical properties of CdSe quantum dots grown on ZnSe and ZnBeSe by molecular beam epitaxy X. ZhouM. C. TamargoY. C. Chen Special Issue Paper Pages: 733 - 736
Luminescence study of ZnTe:Cr epilayers grown by molecular-beam epitaxy Ming LuoB. L. VanmilN. C. Giles Special Issue Paper Pages: 737 - 741
The indices of refraction of molecular-beam epitaxy-grown BexZn1−xTe ternary alloys F. C. PeirisM. R. BuckleyM. C. Tamargo Special Issue Paper Pages: 742 - 746
Photoluminescence of CdTe crystals grown by physical-vapor transport W. PaloszK. GraszaA. Burger Special Issue Paper Pages: 747 - 751
Electrical properties of CdTe near the melting point E. BelasR. GrillP. Höschl Special Issue Paper Pages: 752 - 755
Characterization of large single-crystal gamma-ray detectors of cadmium zinc telluride A. BurgerM. GrozaR. B. James Special Issue Paper Pages: 756 - 760
Development of inclusion-free CdZnTe substrates from crystals grown by the vertical-gradient freeze method J. FrancP. MoravecZ. Šourek Special Issue Paper Pages: 761 - 765
Thermal diffusion of lithium acceptors into ZnO crystals N. Y. GarcesLijun WangD. C. Reynolds Special Issue Paper Pages: 766 - 771
Effects of excess tellurium on the properties of CdZnTe radiation detectors Muren ChuSevag TerterianArnold Burger Special Issue Paper Pages: 778 - 782
Optical properties of CdS0.2Se0.8:V Jonathan T. GoldsteinMelvin OhmerYing-Fang Chen Special Issue Paper Pages: 783 - 788
Internal electric field measurements in cadmium zinc telluride using transmission two-modulator generalized ellipsometry G. E. Jellison Jr.D. E. HolcombF. Lu Special Issue Paper Pages: 789 - 795
Uniformity and reproducibility studies of low-pressure-grown Cd0.90Zn0.10Te crystalline materials for radiation detectors S. TerterianM. ChuP. N. Luke Special Issue Paper Pages: 796 - 802
Mid-wavelength infrared p-on-n Hg1−xCdxTe heterostructure detectors: 30–120 kelvin state-of-the-Art performance Majid ZandianJ. D. GarnettDonald N. B. Hall Special Issue Paper Pages: 803 - 809
Low-temperature annealing of (Hg,Cd)Te D. ChandraH. F. SchaakeM. A. Kinch Special Issue Paper Pages: 810 - 815
Inductively coupled plasma etching of HgCdTe E. P. G. SmithJ. K. GleasonM. S. Welkowsky Special Issue Paper Pages: 816 - 820
Scalability of dry-etch processing for small unit-cell HgCdTe focal-plane arrays E. P. G. SmithG. M. VenzorJ. H. Dinan Special Issue Paper Pages: 821 - 826