1. Foreword

   • David P. Field
   • Qing-Tang Jiang
   • Matthew M. Nowell

   Special Issue Paper Pages: 1 - 1

2. Correlating discrete orientation and grain size to the sputter deposition properties of tantalum

   • Christopher A. Michaluk

   Special Issue Paper Pages: 2 - 9

3. Analysis of copper grains in damascene trenches after rapid thermal processing or furnace anneals

   • Qing-Tang Jiang
   • Matt Nowell
   • J. D. Luttmer

   Special Issue Paper Pages: 10 - 15

4. Application of an electron backscatter diffraction pattern to Cu damascene-fabricated interconnections filled by a high-pressure anneal process

   • Rika Yoda
   • Sumio Nakazawa
   • Takashi Onishi

   Special Issue Paper Pages: 16 - 22

5. Ion beam preparation of passivated copper integrated circuit structures for electron backscatter diffraction/orientation imaging microscopy analysis

   • Matthew M. Nowell

   Special Issue Paper Pages: 23 - 32

6. Electron backscattering diffraction investigation of focused ion beam surfaces

   • T. L. Matteson
   • S. W. Schwarz
   • L. A. Giannuzzi

   Special Issue Paper Pages: 33 - 39

7. The microstructure of Cu films deposited by the self-ion assisted technique

   • D. P. Field
   • O. V. Kononenko
   • V. N. Matveev

   Special Issue Paper Pages: 40 - 44

8. Electromigration-induced damage in bamboo Al interconnects

   • J. Böhm
   • C. A. Volkert
   • E. Arzt

   Special Issue Paper Pages: 45 - 49

9. Investigation of coincident site lattice boundary criteria in Cu thin films

   • Stuart I. Wright

   Special Issue Paper Pages: 50 - 54

10. Effect of the underlayer on the microstructure and surface evolution in Al-0.5wt.%Cu polycrystalline thin films

    • Adriana E. Lita
    • John E. Sanchez Jr.

    Special Issue Paper Pages: 55 - 65

11. Nanoindentation and orientation imaging: Probing small volumes and thin films for mechanical properties

    • D. F. Bahr
    • K. A. Nibur
    • K. R. Morasch

    Special Issue Paper Pages: 66 - 70

12. Properties of the GaAs oxide layer grown by the liquid-phase chemical-enhanced technique on the S-passivated GaAs surface

    • Dei-Wei Chou
    • Ruey-Fa Lou
    • Mau-Phon Houng

    Special Issue Paper Pages: 71 - 75

13. Microstructural analysis of NiInGe ohmic contacts for n-type GaAs

    • Yukito Tsunoda
    • Masanori Murakami

    Special Issue Paper Pages: 76 - 81

14. Curing of polyimide and the effect of the TEOS SiO₂ barrier layer on the electromigration of sputtered Cu with polyimide passivation

    • Hanyi Hung
    • Bi-Shiou Chiou

    Special Issue Paper Pages: 82 - 87

15. Microstructure of GaN deposited by lateral confined epitaxy on patterned Si (111)

    • Feng Wu
    • Shai Zamir
    • Yuval Golan

    Special Issue Paper Pages: 88 - 93

16. Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from In_xGa_1−xN (0≤x≤0.13)

    • J. C. Roberts
    • C. A. Parker
    • M. J. Reed

    Letters Pages: L1 - L6

17. Effects of growth and postgrowth parameters on the microstructure and copper distribution in Al(Cu)/SiO₂ thin films

    • N. Hozhabri
    • K. M. Watson
    • A. R. Chaurasia

    Letters Pages: L7 - L10