Correlating discrete orientation and grain size to the sputter deposition properties of tantalum Christopher A. Michaluk Special Issue Paper Pages: 2 - 9
Analysis of copper grains in damascene trenches after rapid thermal processing or furnace anneals Qing-Tang JiangMatt NowellJ. D. Luttmer Special Issue Paper Pages: 10 - 15
Application of an electron backscatter diffraction pattern to Cu damascene-fabricated interconnections filled by a high-pressure anneal process Rika YodaSumio NakazawaTakashi Onishi Special Issue Paper Pages: 16 - 22
Ion beam preparation of passivated copper integrated circuit structures for electron backscatter diffraction/orientation imaging microscopy analysis Matthew M. Nowell Special Issue Paper Pages: 23 - 32
Electron backscattering diffraction investigation of focused ion beam surfaces T. L. MattesonS. W. SchwarzL. A. Giannuzzi Special Issue Paper Pages: 33 - 39
The microstructure of Cu films deposited by the self-ion assisted technique D. P. FieldO. V. KononenkoV. N. Matveev Special Issue Paper Pages: 40 - 44
Electromigration-induced damage in bamboo Al interconnects J. BöhmC. A. VolkertE. Arzt Special Issue Paper Pages: 45 - 49
Investigation of coincident site lattice boundary criteria in Cu thin films Stuart I. Wright Special Issue Paper Pages: 50 - 54
Effect of the underlayer on the microstructure and surface evolution in Al-0.5wt.%Cu polycrystalline thin films Adriana E. LitaJohn E. Sanchez Jr. Special Issue Paper Pages: 55 - 65
Nanoindentation and orientation imaging: Probing small volumes and thin films for mechanical properties D. F. BahrK. A. NiburK. R. Morasch Special Issue Paper Pages: 66 - 70
Properties of the GaAs oxide layer grown by the liquid-phase chemical-enhanced technique on the S-passivated GaAs surface Dei-Wei ChouRuey-Fa LouMau-Phon Houng Special Issue Paper Pages: 71 - 75
Microstructural analysis of NiInGe ohmic contacts for n-type GaAs Yukito TsunodaMasanori Murakami Special Issue Paper Pages: 76 - 81
Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation Hanyi HungBi-Shiou Chiou Special Issue Paper Pages: 82 - 87
Microstructure of GaN deposited by lateral confined epitaxy on patterned Si (111) Feng WuShai ZamirYuval Golan Special Issue Paper Pages: 88 - 93
Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1−xN (0≤x≤0.13) J. C. RobertsC. A. ParkerM. J. Reed Letters Pages: L1 - L6
Effects of growth and postgrowth parameters on the microstructure and copper distribution in Al(Cu)/SiO2 thin films N. HozhabriK. M. WatsonA. R. Chaurasia Letters Pages: L7 - L10