1. Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN

   • F. K. Koschnick
   • K. Michael
   • E. Munoz

   Regular Issue Paper Pages: 1351 - 1355

2. Fracture of Sn-3.5%Ag solder alloy under creep

   • V. I. Igoshev
   • J. I. Kleiman
   • U. Michon

   Regular Issue Paper Pages: 1356 - 1361

3. Temperature dependence of the photoluminescence properties and band gap energy of In_xGa_1−xAs/GaAs quantum wells

   • J.R Botha
   • A. W. R. Leitch

   Regular Issue Paper Pages: 1362 - 1371

4. Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures

   • Y. Q. Wang
   • Z. L. Wang
   • G. May

   Regular Issue Paper Pages: 1372 - 1379

5. Optical transmission losses in polycrystalline silicon strip waveguides: Effects of waveguide dimensions, thermal treatment, hydrogen passivation, and wavelength

   • Ling Liao
   • Desmond R. Lim
   • Lionel C. Kimerling

   Regular Issue Paper Pages: 1380 - 1386

6. Molecular beam epitaxial growth of BGaAs ternary compounds

   • V. K. Gupta
   • M. W. Koch
   • G. W. Wicks

   Regular Issue Paper Pages: 1387 - 1391

7. Numerical prediction of mechanical properties of Pb-Sn solder alloys containing antimony, bismuth and or silver ternary trace elements

   • Shiva P. Gadag
   • Susant Patra

   Regular Issue Paper Pages: 1392 - 1397

8. Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N₂ ambient

   • D. Keiper
   • R. Westphalen
   • G. Landgren

   Regular Issue Paper Pages: 1398 - 1401

9. Control of the critical supercooling in LPE

   • A. Yu. Gorbatchev
   • V. A. Mishurnyi
   • F. de Anda

   Regular Issue Paper Pages: 1402 - 1405

10. Effect of UV-ozone oxidation on the device characteristics of InP-based heterostructure bipolar transistors

    • R. Driad
    • W. R. McKinnon
    • S. P. McAlister

    Letter Pages: L33 - L36