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Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N2 ambient

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Abstract

We have investigated the growth of quaternary In1−xGaxAsyP1−y/InP materials using TBA and TBP in a N2 ambient. This process improves significantly the uniformity of In1−xGaxAs/InP QWs whereas it does not improve the quaternary Q(1.3)/InP uniformity compared to the conventional process utilizing AsH3 and PH3 in H2. The effect on the x and y uniformity for different combinations of the group-V precursors TBA, TBP, PH3, and AsH3 with the carrier gases H2 and N2 is evaluated. Advantages with the TBA/TBP/N2 process are discussed.

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Authors and Affiliations

  1. Department of Electronics, Royal Institute of Technology (KTH), Electrum 229, S-164 40, Kista, Sweden

    D. Keiper, R. Westphalen & G. Landgren

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  1. D. Keiper
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  2. R. Westphalen
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  3. G. Landgren
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Keiper, D., Westphalen, R. & Landgren, G. Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N2 ambient. J. Electron. Mater. 29, 1398–1401 (2000). https://doi.org/10.1007/s11664-000-0125-1

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  • DOI: https://doi.org/10.1007/s11664-000-0125-1

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