1. Foreword

   • Supriyo Bandyopadhayay
   • Dieter Bimberg
   • Akio Sasaki

   EditorialNotes Pages: 391 - 391

2. Electronic coupling and structural ordering of quantum dots using InAs quantum dot columns

   • G. S. Solomon

   Special Issue Paper Pages: 392 - 404

3. Charging energy and spin polarization in artificial atoms and molecules

   • Satyadev Nagaraja
   • Jean-Pierre Leburton

   Special Issue Paper Pages: 405 - 413

4. Indirect band gaps in quantum dots made from direct-gap bulk materials

   • A. J. Williamson
   • A. Franceschetti
   • Alex Zunger

   Special Issue Paper Pages: 414 - 425

5. Mechanisms determining three-dimensional SiGe lsland density on Si(001)

   • J. S. Sullivan
   • H. Evans
   • M. G. Lagally

   Special Issue Paper Pages: 426 - 431

6. Formation of nanometer-scale InAs islands on silicon

   • P. C. Sharma
   • K. W. Alt
   • K. L. Wang

   Special Issue Paper Pages: 432 - 436

7. In situ control of strain-induced dot structure by arsenic/phosphorus replacement

   • Kazunari Ozasa
   • Yoshinobu Aoyagi

   Special Issue Paper Pages: 437 - 441

8. Direct production of nearly monosize and monodispersed CdS with a size near 1 nm

   • R. Sivamohan
   • A. Kasuya

   Special Issue Paper Pages: 442 - 444

9. Spatial ordering of self-organized InGaAs/AlGaAs quantum disks on GaAs (311)B substrates

   • Eiichi Kuramochi
   • Jiro Temmyo
   • Toshiaki Tamamura

   Special Issue Paper Pages: 445 - 451

10. Stacking number dependence of size distribution of vertically stacked InAs/GaAs quantum dots

    • Y. Furukawa
    • S. Noda
    • A. Sasaki

    Special Issue Paper Pages: 452 - 456

11. Facet preferential growth of self-assembled InAs dots on patterned GaAs substrates

    • Kanji Yoh
    • Toshiya Saitoh
    • Hironobu Kazama

    Special Issue Paper Pages: 457 - 465

12. InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition

    • Yoshiki Sakuma
    • Masashi Shima
    • Takashi Sekiguchi

    Special Issue Paper Pages: 466 - 480

13. The shape of self-assembled InAs islands grown by molecular beam epitaxy

    • Hao Lee
    • Weidong Yang
    • A. G. Norman

    Special Issue Paper Pages: 481 - 485

14. Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures

    • P. N. Brunkov
    • A. R. Kovsh
    • C. M. A. Kapteyn

    Special Issue Paper Pages: 486 - 490

15. Metastable population of self-organized InAs/GaAs quantum dots

    • M. M. Sobolev
    • A. R. Kovsh
    • A. E. Zhukov

    Special Issue Paper Pages: 491 - 495

16. Optical and electrical properties of Al₂O₃ films containing silicon nanocrystals

    • S. Yanagiya
    • M. Ishida

    Special Issue Paper Pages: 496 - 502

17. Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

    • Q. D. Zhuang
    • J. M. Li
    • L. Y. Lin

    Special Issue Paper Pages: 503 - 505

18. Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices

    • M. Strassburg
    • R. Heitz
    • D. Gerthsen

    Special Issue Paper Pages: 506 - 514

19. Electrochemically self-assembled quantum dot arrays

    • S. Bandyopadhyay
    • L. Menon
    • D. J. Sellmyer

    Special Issue Paper Pages: 515 - 519

20. Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

    • R. Heitz
    • I. Mukhametzhanov
    • D. Bimberg

    Special Issue Paper Pages: 520 - 527

21. Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

    • W. Zhou
    • B. Xu
    • G. H. Li

    Special Issue Paper Pages: 528 - 531

22. Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 µm) GaAs-based quantum dot lasers

    • D. L. Huffaker
    • Z. Z. Zou
    • D. G. Deppe

    Special Issue Paper Pages: 532 - 536

23. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition

    • A. F. Tsatsul’Nikov
    • B. V. Volovik
    • D. Gerthsen

    Special Issue Paper Pages: 537 - 541

24. Spatially resolved spectroscopy on single self-assembled quantum dots

    • A. Zrenner
    • M. Markmann
    • G. Abstreiter

    Special Issue Paper Pages: 542 - 547

25. Quantitative mobility spectrum analysis (QMSA) for hall characterization of electrons and holes in anisotropic bands

    • I. Vurgaftman
    • J. R. Meyer
    • J. R. Lindemuth

    Special Issue Paper Pages: 548 - 552

26. Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication

    • X. G. Zhang
    • P. Li
    • F. C. Jain

    Special Issue Paper Pages: 553 - 558

27. Optical properties of chemical bath deposited CdS thin films

    • S. Mahanty
    • D. Basak
    • M. Leon

    Special Issue Paper Pages: 559 - 562

28. Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells

    • G. H. Yu
    • X. W. Fan
    • Z. M. Zhu

    Special Issue Paper Pages: 563 - 566

29. The CVD growth of Cu films using H₂ as carrier gas

    • Pi-Jiun Lin
    • Mao-Chieh Chen

    Special Issue Paper Pages: 567 - 571

30. A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts

    • A. K. Fung
    • J. E. Borton
    • A. M. Wowchak

    Special Issue Paper Pages: 572 - 579