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Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

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Abstract

Red-emission at ∼640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.

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Authors and Affiliations

  1. Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China

    W. Zhou, B. Xu, H. Z. Xu, F. Q. Liu, J. B. Liang & Z. G. Wang

  2. National Laboratory For Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China

    Z. Z. Zhu & G. H. Li

Authors
  1. W. Zhou
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  2. B. Xu
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  3. H. Z. Xu
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  4. F. Q. Liu
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  5. J. B. Liang
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  6. Z. G. Wang
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  7. Z. Z. Zhu
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  8. G. H. Li
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Zhou, W., Xu, B., Xu, H.Z. et al. Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001). J. Electron. Mater. 28, 528–531 (1999). https://doi.org/10.1007/s11664-999-0106-y

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  • DOI: https://doi.org/10.1007/s11664-999-0106-y

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