Electronic coupling and structural ordering of quantum dots using InAs quantum dot columns G. S. Solomon Special Issue Paper Pages: 392 - 404
Charging energy and spin polarization in artificial atoms and molecules Satyadev NagarajaJean-Pierre Leburton Special Issue Paper Pages: 405 - 413
Indirect band gaps in quantum dots made from direct-gap bulk materials A. J. WilliamsonA. FranceschettiAlex Zunger Special Issue Paper Pages: 414 - 425
Mechanisms determining three-dimensional SiGe lsland density on Si(001) J. S. SullivanH. EvansM. G. Lagally Special Issue Paper Pages: 426 - 431
Formation of nanometer-scale InAs islands on silicon P. C. SharmaK. W. AltK. L. Wang Special Issue Paper Pages: 432 - 436
In situ control of strain-induced dot structure by arsenic/phosphorus replacement Kazunari OzasaYoshinobu Aoyagi Special Issue Paper Pages: 437 - 441
Direct production of nearly monosize and monodispersed CdS with a size near 1 nm R. SivamohanA. Kasuya Special Issue Paper Pages: 442 - 444
Spatial ordering of self-organized InGaAs/AlGaAs quantum disks on GaAs (311)B substrates Eiichi KuramochiJiro TemmyoToshiaki Tamamura Special Issue Paper Pages: 445 - 451
Stacking number dependence of size distribution of vertically stacked InAs/GaAs quantum dots Y. FurukawaS. NodaA. Sasaki Special Issue Paper Pages: 452 - 456
Facet preferential growth of self-assembled InAs dots on patterned GaAs substrates Kanji YohToshiya SaitohHironobu Kazama Special Issue Paper Pages: 457 - 465
InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition Yoshiki SakumaMasashi ShimaTakashi Sekiguchi Special Issue Paper Pages: 466 - 480
The shape of self-assembled InAs islands grown by molecular beam epitaxy Hao LeeWeidong YangA. G. Norman Special Issue Paper Pages: 481 - 485
Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures P. N. BrunkovA. R. KovshC. M. A. Kapteyn Special Issue Paper Pages: 486 - 490
Metastable population of self-organized InAs/GaAs quantum dots M. M. SobolevA. R. KovshA. E. Zhukov Special Issue Paper Pages: 491 - 495
Optical and electrical properties of Al2O3 films containing silicon nanocrystals S. YanagiyaM. Ishida Special Issue Paper Pages: 496 - 502
Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers Q. D. ZhuangJ. M. LiL. Y. Lin Special Issue Paper Pages: 503 - 505
Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices M. StrassburgR. HeitzD. Gerthsen Special Issue Paper Pages: 506 - 514
Electrochemically self-assembled quantum dot arrays S. BandyopadhyayL. MenonD. J. Sellmyer Special Issue Paper Pages: 515 - 519
Temperature dependent optical properties of self-organized InAs/GaAs quantum dots R. HeitzI. MukhametzhanovD. Bimberg Special Issue Paper Pages: 520 - 527
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) W. ZhouB. XuG. H. Li Special Issue Paper Pages: 528 - 531
Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 µm) GaAs-based quantum dot lasers D. L. HuffakerZ. Z. ZouD. G. Deppe Special Issue Paper Pages: 532 - 536
Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition A. F. Tsatsul’NikovB. V. VolovikD. Gerthsen Special Issue Paper Pages: 537 - 541
Spatially resolved spectroscopy on single self-assembled quantum dots A. ZrennerM. MarkmannG. Abstreiter Special Issue Paper Pages: 542 - 547
Quantitative mobility spectrum analysis (QMSA) for hall characterization of electrons and holes in anisotropic bands I. VurgaftmanJ. R. MeyerJ. R. Lindemuth Special Issue Paper Pages: 548 - 552
Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication X. G. ZhangP. LiF. C. Jain Special Issue Paper Pages: 553 - 558
Optical properties of chemical bath deposited CdS thin films S. MahantyD. BasakM. Leon Special Issue Paper Pages: 559 - 562
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells G. H. YuX. W. FanZ. M. Zhu Special Issue Paper Pages: 563 - 566
The CVD growth of Cu films using H2 as carrier gas Pi-Jiun LinMao-Chieh Chen Special Issue Paper Pages: 567 - 571
A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts A. K. FungJ. E. BortonA. M. Wowchak Special Issue Paper Pages: 572 - 579