1. Foreword

   • N. M. Ravindra
   • O. H. Gokce
   • B. L. Sopori

   EditorialNotes Pages: 1277 - 1277

2. Transient thermal behavior in a new RTP chamber

   • A. Tillmann
   • U. Kreiser
   • T. Theilig

   Special Issue Paper Pages: 1278 - 1285

3. Controlled thermal kinetics in RTP

   • J. Niess
   • Ch. Grunwald
   • Z. Nényei

   Special Issue Paper Pages: 1286 - 1290

4. RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF₂ ion implants

   • Steven Marcus
   • Wilfried Lerch
   • Judy Chow

   Special Issue Paper Pages: 1291 - 1295

5. Optimization of RTA parameters to produce ultra-shallow, highly activated B⁺, BF ₂ ⁺ , and As⁺ ion implanted junctions

   • Daniel F. Downey
   • Steven D. Marcus
   • Judy W. Chow

   Special Issue Paper Pages: 1296 - 1314

6. Optical effects during rapid thermal diffusion

   • S. Noël
   • L. Ventura
   • T. Theiler

   Special Issue Paper Pages: 1315 - 1322

7. Wafer emissivity independent temperature measurements

   • S. Abedrabbo
   • F. M. Tong
   • A. T. Fiory

   Special Issue Paper Pages: 1323 - 1328

8. Activation annealing of Si-implanted GaN up to 1500°C using a novel RTP technique

   • M. Fu
   • V. Sarvepalli
   • J. A. Sekhar

   Special Issue Paper Pages: 1329 - 1333

9. Use of the effective heat of formation model to determine phase formation sequences of In-Se, Ga-Se, Cu-Se, and Ga-In multilayer thin films

   • H. J. Moore
   • D. L. Olson
   • R. Noufi

   Special Issue Paper Pages: 1334 - 1340

10. Modeling emissivity of rough and textured silicon wafers

    • Bhushan L. Sopori
    • Wei Chen
    • N. M. Ravindra

    Special Issue Paper Pages: 1341 - 1346

11. Preparation and characterization of SiO₂ films with different techniques

    • Zhang Xuping
    • Li Qing
    • Zhang Haokang

    Special Issue Paper Pages: 1347 - 1350

12. Compositional, structural, optical and electrical characterization of CulnTe₂ grown by the tellurization of stoichiometric Cu and in in the liquid phase

    • G. Marin
    • S. M. Wasim
    • A. E. Mora

    Special Issue Paper Pages: 1351 - 1357

13. Improved electrical properties on the anodic oxide/InP interface for MOS structures

    • R. R. Sumathi
    • N. Dharmarasu
    • J. Kumar

    Special Issue Paper Pages: 1358 - 1361

14. Modeling the atomic transport kinetics in high-lead solders

    • G. Ghosh
    • Z. -K. Liu

    Special Issue Paper Pages: 1362 - 1366

15. Microstructure changes in Sn-3.5Ag solder alloy during creep

    • V. I. Igoshev
    • J. I. Kleiman
    • M. Wiseman

    Special Issue Paper Pages: 1367 - 1371

16. Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n⁺-InGaAs/n-GaAs layer systems

    • E. Nebauer
    • M. Mai
    • J. Würfl

    Special Issue Paper Pages: 1372 - 1374

17. Photoelectrochemical capacitance-voltage measurements of 4H-SiC

    • C. E. Stutz

    Letter Pages: L81 - L83