Abstract
A study on the techniques to yield wafer emissivity independent temperature measurements in rapid thermal processing has been presented. This study focuses on the Steag-AST Electronik approach to enhance wafer emissivity by using the Hotliner*. The Hotliner comprises of a heavily doped p-Si substrate sandwiched with Si3N4/SiO2 from both sides. Experimental measurements on the optical properties of the Hotliner using a spectral emissometer operating in the wavelength range of 1–20 µm are presented here. Results of the simulation of the experimental data using the MIT/SEMATECH Multi-Rad model are discussed.
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Hotliner is a trademark of Steag-AST Electronik, patent pending.
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Abedrabbo, S., Tong, F.M., Ravindra, N.M. et al. Wafer emissivity independent temperature measurements. J. Electron. Mater. 27, 1323–1328 (1998). https://doi.org/10.1007/s11664-998-0091-6
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DOI: https://doi.org/10.1007/s11664-998-0091-6