1. Permanent-magnet materials: Research directions and opportunities

   • R. H. Richman
   • W. P. McNaughton

   OriginalPaper Pages: 415 - 422

2. Surface treatment of znse substrate and homoepitaxy of znse

   • M. W. Cho
   • K. W. Koh
   • Y. Okada

   OriginalPaper Pages: 423 - 428

3. Dry etching of III-V semiconductors in IBr/Ar electron cyclotron resonance plasmas

   • J. W. Lee
   • J. Hong
   • F. Ren

   OriginalPaper Pages: 429 - 435

4. Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases

   • Moo-Sung Kim
   • Cheon Lee
   • Suk-Ki Min

   OriginalPaper Pages: 436 - 439

5. Nearly room-temperature type-II quantum-well lasers at 3–4 μm

   • Chih-Hsiang Lin
   • P. C. Chang
   • E. J. Bartoli

   OriginalPaper Pages: 440 - 443

6. LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF₂CaF₂ buffer layers

   • B. N. Strecker
   • P. J. McCann
   • M. B. Johnson

   OriginalPaper Pages: 444 - 448

7. Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga Ions

   • J. Jasinski
   • Z. Liliental-Weber
   • M. Kaminska

   OriginalPaper Pages: 449 - 458

8. Chemical composition and thermal stability of 2 butyl, 5 chloro, benzimidazole film

   • V. Sirtori
   • L. Lombardi
   • G. Redaelli

   OriginalPaper Pages: 459 - 462

9. Defect characterization of n-type Si_1−xGe_x after 1.0 kev helium-ion etching

   • S. A. Goodman
   • F. D. Auret
   • J. B. Malherbe

   OriginalPaper Pages: 463 - 469

10. Thermally stimulated current measurements on a UV irradiated organic photoreceptor layer

    • D. P. Webb
    • Y. C. Chan
    • D. S. Chrp

    OriginalPaper Pages: 470 - 473

11. Improved reproducibility of AiGalnAs laser threshold by InP substrate deoxidation under phosphorous flux

    • J. C. Harmand
    • E. Idiart-Alhor
    • F. Barthe

    OriginalPaper Pages: L9 - L12